180nm X-ray Lithography with high repetition rate laser plasma source

I. C. E. Turcu; C. M. Reeves; Tom Stevenson; A. W. S. Ross; A. M. Gundlach; P. Prewett; P. Anastasi; B. Koek; P. Mitchell; P. Lake

doi:10.1016/0167-9317(94)00110-G

180nm X-ray Lithography with high repetition rate laser plasma source

I. C. E. Turcu, C. M. Reeves, Tom Stevenson, A. W. S. Ross, A. M. Gundlach, P. Prewett, P. Anastasi, B. Koek, P. Mitchell, P. Lake

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

The laser-plasma X-ray source at Rutherford Appleton Laboratory was operated at ∼1nm wavelength and 100mW average power for proximity printing of 180nm wide lines into 0.5μm thick photoresist. The resist process was used to define the gate electrode into polysilicon.

Original language	English
Pages (from-to)	295-298
Number of pages	4
Journal	Microelectronic Engineering
Volume	27
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(94)00110-G
Publication status	Published - 1995

Access to Document

10.1016/0167-9317(94)00110-G

Cite this

@article{ea8711a6d3874a89b562945937841e1d,

title = "180nm X-ray Lithography with high repetition rate laser plasma source",

abstract = "The laser-plasma X-ray source at Rutherford Appleton Laboratory was operated at ∼1nm wavelength and 100mW average power for proximity printing of 180nm wide lines into 0.5μm thick photoresist. The resist process was used to define the gate electrode into polysilicon.",

author = "Turcu, {I. C. E.} and Reeves, {C. M.} and Tom Stevenson and Ross, {A. W. S.} and Gundlach, {A. M.} and P. Prewett and P. Anastasi and B. Koek and P. Mitchell and P. Lake",

year = "1995",

doi = "10.1016/0167-9317(94)00110-G",

language = "English",

volume = "27",

pages = "295--298",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - 180nm X-ray Lithography with high repetition rate laser plasma source

AU - Turcu, I. C. E.

AU - Reeves, C. M.

AU - Stevenson, Tom

AU - Ross, A. W. S.

AU - Gundlach, A. M.

AU - Prewett, P.

AU - Anastasi, P.

AU - Koek, B.

AU - Mitchell, P.

AU - Lake, P.

PY - 1995

Y1 - 1995

N2 - The laser-plasma X-ray source at Rutherford Appleton Laboratory was operated at ∼1nm wavelength and 100mW average power for proximity printing of 180nm wide lines into 0.5μm thick photoresist. The resist process was used to define the gate electrode into polysilicon.

AB - The laser-plasma X-ray source at Rutherford Appleton Laboratory was operated at ∼1nm wavelength and 100mW average power for proximity printing of 180nm wide lines into 0.5μm thick photoresist. The resist process was used to define the gate electrode into polysilicon.

U2 - 10.1016/0167-9317(94)00110-G

DO - 10.1016/0167-9317(94)00110-G

M3 - Article

SN - 0167-9317

VL - 27

SP - 295

EP - 298

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

180nm X-ray Lithography with high repetition rate laser plasma source

Abstract / Description of output

Access to Document

Fingerprint

Cite this