1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction

D McCammon, M Galeazzi, D. Liu, W T Sanders, Britton Smith, P Tan, K R Boyce, R Brekosky, J D Gygax, R Kelley, D B Mott, F S Porter, C K Stahle, C M Stahle, A E Szymkowiak

Research output: Contribution to journalArticlepeer-review


In the course of developing microcalorimeters as detectors for astronomical X‐ray spectroscopy, we have undertaken an empirical characterization of “non‐ideal” effects in the doped semiconductor thermometers used with these detectors, which operate at temperatures near 50 mK. We have found three apparently independent categories of such behavior that are apparently intrinsic properties of the variable‐range hopping conduction mechanism in these devices: 1/f fluctuations in the resistance, which seems to be a 2D effect; a departure from the ideal coulomb‐gap temperature dependence of the resistance at temperatures below T0/24; and an electrical nonlinearity that has the time dependence and extra noise that are quantitatively predicted by a simple hot electron model. This work has been done largely with ion‐implanted Si : P : B, but similar behaviors have been observed in transmutation doped germanium.
Original languageEnglish
Pages (from-to)197-204
Number of pages8
Journalphysica status solidi (b) – basic solid state physics
Issue number1
Publication statusPublished - 11 Mar 2002


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