1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction

D McCammon; M Galeazzi; D. Liu; W T  Sanders; Britton Smith; P Tan; K R Boyce; R Brekosky; J D Gygax; R Kelley; D B  Mott; F S  Porter; C K Stahle; C M Stahle; A E Szymkowiak

doi:10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8

1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction

D McCammon, M Galeazzi, D. Liu, W T Sanders, Britton Smith, P Tan, K R Boyce, R Brekosky, J D Gygax, R Kelley, D B Mott, F S Porter, C K Stahle, C M Stahle, A E Szymkowiak

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

In the course of developing microcalorimeters as detectors for astronomical X‐ray spectroscopy, we have undertaken an empirical characterization of “non‐ideal” effects in the doped semiconductor thermometers used with these detectors, which operate at temperatures near 50 mK. We have found three apparently independent categories of such behavior that are apparently intrinsic properties of the variable‐range hopping conduction mechanism in these devices: 1/f fluctuations in the resistance, which seems to be a 2D effect; a departure from the ideal coulomb‐gap temperature dependence of the resistance at temperatures below T0/24; and an electrical nonlinearity that has the time dependence and extra noise that are quantitatively predicted by a simple hot electron model. This work has been done largely with ion‐implanted Si : P : B, but similar behaviors have been observed in transmutation doped germanium.

Original language	English
Pages (from-to)	197-204
Number of pages	8
Journal	physica status solidi (b) – basic solid state physics
Volume	230
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8
Publication status	Published - 11 Mar 2002

Access to Document

10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8

https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-3951(200203)230:1%3C197::AID-PSSB197%3E3.0.CO;2-8

Cite this

McCammon, D., Galeazzi, M., Liu, D., Sanders, W. T., Smith, B., Tan, P., Boyce, K. R., Brekosky, R., Gygax, J. D., Kelley, R., Mott, D. B., Porter, F. S., Stahle, C. K., Stahle, C. M., & Szymkowiak, A. E. (2002). 1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction. physica status solidi (b) – basic solid state physics, 230(1), 197-204. https://doi.org/10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8

@article{826c1b0cdea54665bfc11070a132dc1e,

title = "1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction",

abstract = "In the course of developing microcalorimeters as detectors for astronomical X‐ray spectroscopy, we have undertaken an empirical characterization of “non‐ideal” effects in the doped semiconductor thermometers used with these detectors, which operate at temperatures near 50 mK. We have found three apparently independent categories of such behavior that are apparently intrinsic properties of the variable‐range hopping conduction mechanism in these devices: 1/f fluctuations in the resistance, which seems to be a 2D effect; a departure from the ideal coulomb‐gap temperature dependence of the resistance at temperatures below T0/24; and an electrical nonlinearity that has the time dependence and extra noise that are quantitatively predicted by a simple hot electron model. This work has been done largely with ion‐implanted Si : P : B, but similar behaviors have been observed in transmutation doped germanium.",

author = "D McCammon and M Galeazzi and D. Liu and Sanders, {W T} and Britton Smith and P Tan and Boyce, {K R} and R Brekosky and Gygax, {J D} and R Kelley and Mott, {D B} and Porter, {F S} and Stahle, {C K} and Stahle, {C M} and Szymkowiak, {A E}",

year = "2002",

month = mar,

day = "11",

doi = "10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8",

language = "English",

volume = "230",

pages = "197--204",

journal = "physica status solidi (b) – basic solid state physics",

issn = "0370-1972",

publisher = "Wiley",

number = "1",

}

McCammon, D, Galeazzi, M, Liu, D, Sanders, WT, Smith, B, Tan, P, Boyce, KR, Brekosky, R, Gygax, JD, Kelley, R, Mott, DB, Porter, FS, Stahle, CK, Stahle, CM & Szymkowiak, AE 2002, '1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction', physica status solidi (b) – basic solid state physics, vol. 230, no. 1, pp. 197-204. https://doi.org/10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8

TY - JOUR

T1 - 1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction

AU - McCammon, D

AU - Galeazzi, M

AU - Liu, D.

AU - Sanders, W T

AU - Smith, Britton

AU - Tan, P

AU - Boyce, K R

AU - Brekosky, R

AU - Gygax, J D

AU - Kelley, R

AU - Mott, D B

AU - Porter, F S

AU - Stahle, C K

AU - Stahle, C M

AU - Szymkowiak, A E

PY - 2002/3/11

Y1 - 2002/3/11

N2 - In the course of developing microcalorimeters as detectors for astronomical X‐ray spectroscopy, we have undertaken an empirical characterization of “non‐ideal” effects in the doped semiconductor thermometers used with these detectors, which operate at temperatures near 50 mK. We have found three apparently independent categories of such behavior that are apparently intrinsic properties of the variable‐range hopping conduction mechanism in these devices: 1/f fluctuations in the resistance, which seems to be a 2D effect; a departure from the ideal coulomb‐gap temperature dependence of the resistance at temperatures below T0/24; and an electrical nonlinearity that has the time dependence and extra noise that are quantitatively predicted by a simple hot electron model. This work has been done largely with ion‐implanted Si : P : B, but similar behaviors have been observed in transmutation doped germanium.

AB - In the course of developing microcalorimeters as detectors for astronomical X‐ray spectroscopy, we have undertaken an empirical characterization of “non‐ideal” effects in the doped semiconductor thermometers used with these detectors, which operate at temperatures near 50 mK. We have found three apparently independent categories of such behavior that are apparently intrinsic properties of the variable‐range hopping conduction mechanism in these devices: 1/f fluctuations in the resistance, which seems to be a 2D effect; a departure from the ideal coulomb‐gap temperature dependence of the resistance at temperatures below T0/24; and an electrical nonlinearity that has the time dependence and extra noise that are quantitatively predicted by a simple hot electron model. This work has been done largely with ion‐implanted Si : P : B, but similar behaviors have been observed in transmutation doped germanium.

U2 - 10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8

DO - 10.1002/1521-3951(200203)230:1<197::AID-PSSB197>3.0.CO;2-8

M3 - Article

VL - 230

SP - 197

EP - 204

JO - physica status solidi (b) – basic solid state physics

JF - physica status solidi (b) – basic solid state physics

SN - 0370-1972

IS - 1

ER -

1/f Noise and Hot Electron Effects in Variable Range Hopping Conduction

Abstract

Access to Document

Fingerprint

Cite this