2-Level Si IGBT Converter with Parallel Part-Rated SiC Converter Providing Partial Power Transfer and Active Filtering

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This paper investigates the potential of utilising partially rated Silicon Carbide (SiC) MOSFET based converters as active filters for slower switching silicon IGBT based converters in multi-megawatt applications. This allows the effective switching frequency of the overall converter to be significantly increased, reducing the requirement for external filters and increasing the converters current control bandwidth, without relying on a wholly SiC MOSFET based approach. If a parallel DC bus arrangement is adopted this also opens up the potential for partial-load efficiency improvements. A finite step model predictive current controller is adopted, which allows significant flexibility in how the converter is operated.
Original languageUndefined/Unknown
Title of host publication2019 20th Workshop on Control and Modeling for Power Electronics (COMPEL)
PublisherIEEE Xplore
Number of pages7
Publication statusPublished - 1 Jun 2019


  • active filters
  • electric current control
  • insulated gate bipolar transistors
  • power system control
  • predictive control
  • silicon compounds
  • switching convertors
  • switching systems (control)
  • multimegawatt applications
  • switching frequency
  • silicon carbide MOSFET based converters
  • switching silicon IGBT based converters
  • 2-level silicon IGBT converter
  • converter current control bandwidth
  • finite step model predictive current controller
  • parallel part-rated silicon carbide converter
  • Silicon carbide
  • Insulated gate bipolar transistors
  • Switching frequency
  • Silicon
  • Switches
  • Harmonic analysis
  • Power Electronic Converter
  • Partial Load Efficiency
  • Silicon Carbide MOSFETS
  • Model Predictive Control
  • Active Filtering

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