256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

Istvan Gyongy; Neil Calder; Amy Davies; Neale Dutton; Paul A. Dalgarno; Rory R Duncan; Colin Rickman; Robert Henderson

doi:10.1109/IEDM.2016.7838373

256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

Istvan Gyongy, Neil Calder, Amy Davies, Neale Dutton, Paul A. Dalgarno, Rory R Duncan, Colin Rickman, Robert Henderson

School of Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract / Description of output

A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.

Original language	English
Number of pages	4
DOIs	https://doi.org/10.1109/IEDM.2016.7838373
Publication status	Published - 3 Dec 2016
Event	International Electron Devices Meeting - San Francisco, United States Duration: 3 Dec 2016 → 6 Dec 2016

Conference

Conference	International Electron Devices Meeting
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 6/12/16

Access to Document

10.1109/IEDM.2016.7838373

GyongyIEDM2016SubmittedSubmitted manuscript, 1.1 MB

TOTALPHOTON: A Total Photon Camera for Molecular Imaging of Live Cells
Henderson, R.
EU government bodies
1/02/14 → 31/01/19
Project: Research

Cite this

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title = "256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications",

abstract = "A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.",

author = "Istvan Gyongy and Neil Calder and Amy Davies and Neale Dutton and Dalgarno, {Paul A.} and Duncan, {Rory R} and Colin Rickman and Robert Henderson",

year = "2016",

month = dec,

day = "3",

doi = "10.1109/IEDM.2016.7838373",

language = "English",

note = "International Electron Devices Meeting ; Conference date: 03-12-2016 Through 06-12-2016",

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T1 - 256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

AU - Gyongy, Istvan

AU - Calder, Neil

AU - Davies, Amy

AU - Dutton, Neale

AU - Dalgarno, Paul A.

AU - Duncan, Rory R

AU - Rickman, Colin

AU - Henderson, Robert

PY - 2016/12/3

Y1 - 2016/12/3

N2 - A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.

AB - A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.

U2 - 10.1109/IEDM.2016.7838373

DO - 10.1109/IEDM.2016.7838373

M3 - Paper

T2 - International Electron Devices Meeting

Y2 - 3 December 2016 through 6 December 2016

ER -

256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

Abstract / Description of output

Conference

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Projects

TOTALPHOTON: A Total Photon Camera for Molecular Imaging of Live Cells

Cite this