256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications

Istvan Gyongy, Neil Calder, Amy Davies, Neale Dutton, Paul A. Dalgarno, Rory R Duncan, Colin Rickman, Robert Henderson

Research output: Contribution to conferencePaperpeer-review

Abstract / Description of output

A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.
Original languageEnglish
Number of pages4
Publication statusPublished - 3 Dec 2016
EventInternational Electron Devices Meeting - San Francisco, United States
Duration: 3 Dec 20166 Dec 2016


ConferenceInternational Electron Devices Meeting
Country/TerritoryUnited States
CitySan Francisco


Dive into the research topics of '256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications'. Together they form a unique fingerprint.

Cite this