Projects per year
Abstract
A scalable NMOS-only 11T SPAD-based analogue single photon counting pixel is presented. Implemented in advanced 130nm imaging low voltage CMOS, with no extra implants, a state of the art 9.8μm pitch is achieved. Novel pixel operation using a charge transfer amplifier (CTA) allows bias controlled sensitivity from 13.1mV/event to 150μV/event. Less than 2% PRNU is measured in the sensitivity range 5.5mV to 13.1mV per event with <0.01e- input referred noise. A second mode operates the CTA as a switched current source enables the pixel to operate as a fast time-gated Quanta Image Sensor pixel.
Original language | English |
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Number of pages | 4 |
Publication status | Published - Jun 2013 |
Event | International Image Sensor Workshop - Utah, Snowbird, United States Duration: 12 Jun 2013 → 16 Jun 2013 |
Conference
Conference | International Image Sensor Workshop |
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Country/Territory | United States |
City | Snowbird |
Period | 12/06/13 → 16/06/13 |
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Dive into the research topics of '9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias Controlled Sensitivity'. Together they form a unique fingerprint.Projects
- 1 Finished
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PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
Henderson, R. (Principal Investigator)
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research