9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias Controlled Sensitivity

Neale Dutton, Lindsay A. Grant, Robert Henderson

Research output: Contribution to conferencePaperpeer-review

Abstract / Description of output

A scalable NMOS-only 11T SPAD-based analogue single photon counting pixel is presented. Implemented in advanced 130nm imaging low voltage CMOS, with no extra implants, a state of the art 9.8μm pitch is achieved. Novel pixel operation using a charge transfer amplifier (CTA) allows bias controlled sensitivity from 13.1mV/event to 150μV/event. Less than 2% PRNU is measured in the sensitivity range 5.5mV to 13.1mV per event with <0.01e- input referred noise. A second mode operates the CTA as a switched current source enables the pixel to operate as a fast time-gated Quanta Image Sensor pixel.
Original languageEnglish
Number of pages4
Publication statusPublished - Jun 2013
EventInternational Image Sensor Workshop - Utah, Snowbird, United States
Duration: 12 Jun 201316 Jun 2013

Conference

ConferenceInternational Image Sensor Workshop
Country/TerritoryUnited States
CitySnowbird
Period12/06/1316/06/13

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