A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

Radu Berdan; Alexander Serb; Ali Khiat; Anna Regoutz; Christos Papavassiliou; Themis Prodromakis

doi:10.1109/TED.2015.2433676

A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

Radu Berdan, Alexander Serb, Ali Khiat, Anna Regoutz, Christos Papavassiliou, Themis Prodromakis

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (M_t) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing M_t measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO_2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone M_t in the range of 1 kΩ to 1 MΩ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.

Original language	English
Article number	7113814
Pages (from-to)	2190-2196
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	7
DOIs	https://doi.org/10.1109/TED.2015.2433676
Publication status	Published - 1 Jun 2015

Keywords / Materials (for Non-textual outputs)

Crossbars
memristors
resistive random-access memory (RRAM)
sneak paths

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10.1109/TED.2015.2433676

Cite this

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title = "A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays",

abstract = "Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.",

keywords = "Crossbars, memristors, resistive random-access memory (RRAM), sneak paths",

author = "Radu Berdan and Alexander Serb and Ali Khiat and Anna Regoutz and Christos Papavassiliou and Themis Prodromakis",

year = "2015",

month = jun,

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doi = "10.1109/TED.2015.2433676",

language = "English",

volume = "62",

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AU - Berdan, Radu

AU - Serb, Alexander

AU - Khiat, Ali

AU - Regoutz, Anna

AU - Papavassiliou, Christos

AU - Prodromakis, Themis

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.

AB - Selectorless crossbar arrays of resistive random-access memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (Mt) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing Mt measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone Mt in the range of 1 kΩ to 1 MΩ with <1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.

KW - Crossbars

KW - memristors

KW - resistive random-access memory (RRAM)

KW - sneak paths

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JO - IEEE Transactions on Electron Devices

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ER -

A μ-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

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