A 130-nm CMOS single photon avalanche diode

Cristiano Niclass*, Marek Gersbach, Robert Henderson, Lindsay Grant, Edoardo Charbon

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application IV
DOIs
Publication statusPublished - 1 Dec 2007
EventOptoelectronic Devices: Physics, Fabrication, and Application IV - Boston, MA, United States
Duration: 11 Sep 200711 Sep 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6766
ISSN (Print)0277-786X

Conference

ConferenceOptoelectronic Devices: Physics, Fabrication, and Application IV
CountryUnited States
CityBoston, MA
Period11/09/0711/09/07

Keywords

  • CMOS single photon detector
  • Geiger mode of operation
  • Single photon avalanche diode
  • SPAD

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