A 130-nm CMOS single photon avalanche diode

Cristiano Niclass; Marek Gersbach; Robert Henderson; Lindsay Grant; Edoardo Charbon

doi:10.1117/12.728878

A 130-nm CMOS single photon avalanche diode

Cristiano Niclass^*, Marek Gersbach, Robert Henderson, Lindsay Grant, Edoardo Charbon

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.

Original language	English
Title of host publication	Optoelectronic Devices
Subtitle of host publication	Physics, Fabrication, and Application IV
DOIs	https://doi.org/10.1117/12.728878
Publication status	Published - 1 Dec 2007
Event	Optoelectronic Devices: Physics, Fabrication, and Application IV - Boston, MA, United States Duration: 11 Sept 2007 → 11 Sept 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6766
ISSN (Print)	0277-786X

Conference

Conference	Optoelectronic Devices: Physics, Fabrication, and Application IV
Country/Territory	United States
City	Boston, MA
Period	11/09/07 → 11/09/07

Keywords / Materials (for Non-textual outputs)

CMOS single photon detector
Geiger mode of operation
Single photon avalanche diode
SPAD

Access to Document

10.1117/12.728878

Cite this

@inproceedings{30cdbd3c1d9a475f95e5028080f76fb7,

title = "A 130-nm CMOS single photon avalanche diode",

abstract = "The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.",

keywords = "CMOS single photon detector, Geiger mode of operation, Single photon avalanche diode, SPAD",

author = "Cristiano Niclass and Marek Gersbach and Robert Henderson and Lindsay Grant and Edoardo Charbon",

year = "2007",

month = dec,

day = "1",

doi = "10.1117/12.728878",

language = "English",

isbn = "9780819469267",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Optoelectronic Devices",

note = "Optoelectronic Devices: Physics, Fabrication, and Application IV ; Conference date: 11-09-2007 Through 11-09-2007",

}

Niclass, C, Gersbach, M, Henderson, R, Grant, L & Charbon, E 2007, A 130-nm CMOS single photon avalanche diode. in Optoelectronic Devices: Physics, Fabrication, and Application IV., 676606, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6766, Optoelectronic Devices: Physics, Fabrication, and Application IV, Boston, MA, United States, 11/09/07. https://doi.org/10.1117/12.728878

TY - GEN

T1 - A 130-nm CMOS single photon avalanche diode

AU - Niclass, Cristiano

AU - Gersbach, Marek

AU - Henderson, Robert

AU - Grant, Lindsay

AU - Charbon, Edoardo

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.

AB - The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode. The dynamics of the new device are investigated using both active and passive quenching methods. Single photon detection is achieved by sensing the avalanche using a fast comparator. The SPAD exhibits a maximum photon detection probability of 41% and a typical dark count rate of 100kHz at room temperature. Thanks to its timing resolution of 144ps (FWHM), the SPAD can be used in disparate disciplines, including medical imaging, 3D vision, biophotonics, low-light-illumination imaging, etc.

KW - CMOS single photon detector

KW - Geiger mode of operation

KW - Single photon avalanche diode

KW - SPAD

UR - http://www.scopus.com/inward/record.url?scp=42449106620&partnerID=8YFLogxK

U2 - 10.1117/12.728878

DO - 10.1117/12.728878

M3 - Conference contribution

AN - SCOPUS:42449106620

SN - 9780819469267

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optoelectronic Devices

T2 - Optoelectronic Devices: Physics, Fabrication, and Application IV

Y2 - 11 September 2007 through 11 September 2007

ER -

A 130-nm CMOS single photon avalanche diode

Abstract

Publication series

Conference

Keywords / Materials (for Non-textual outputs)

Access to Document

Other files and links

Fingerprint

Cite this