A 192×128 Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

Robert K. Henderson; Nick Johnston; Francescopaolo Mattioli Della Rocca; Haochang Chen; David Day-Uei Li; Graham Hungerford; Richard Hirsch; David Mcloskey; Philip Yip; David J. S. Birch

doi:10.1109/JSSC.2019.2905163

A 192×128 Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

Robert K. Henderson, Nick Johnston, Francescopaolo Mattioli Della Rocca, Haochang Chen, David Day-Uei Li, Graham Hungerford, Richard Hirsch, David Mcloskey, Philip Yip, David J. S. Birch

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A 192 × 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4 μm × 9.2 μm pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps fullwidth half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

Original language	English
Pages (from-to)	1907-1916
Number of pages	10
Journal	IEEE Journal of Solid-State Circuits
Volume	54
Issue number	7
Early online date	3 Apr 2019
DOIs	https://doi.org/10.1109/JSSC.2019.2905163
Publication status	Published - 31 Jul 2019

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JSSC2018RevisedSubmittedAccepted author manuscript, 1.57 MB

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UK Quantum Technology Hub in Quantum Enhanced Imaging
Henderson, R.
Other
1/12/14 → 30/11/19
Project: Research
Pilot Optical Line for Imaging and Sensing (POLIS)
Underwood, I. & Henderson, R.
EU government bodies
6/01/14 → 31/07/18
Project: Research
PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
Henderson, R.
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research

Robert Henderson
- Robert.Hendersoned.acuk
- School of Engineering - Personal Chair of Electronic Imaging
Person: Academic: Research Active

Cite this

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title = "A 192×128 Time Correlated SPAD Image Sensor in 40-nm CMOS Technology",

abstract = "A 192 × 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4 μm × 9.2 μm pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps fullwidth half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.",

author = "Henderson, {Robert K.} and Nick Johnston and {Mattioli Della Rocca}, Francescopaolo and Haochang Chen and Li, {David Day-Uei} and Graham Hungerford and Richard Hirsch and David Mcloskey and Philip Yip and Birch, {David J. S.}",

year = "2019",

month = jul,

day = "31",

doi = "10.1109/JSSC.2019.2905163",

language = "English",

volume = "54",

pages = "1907--1916",

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AU - Henderson, Robert K.

AU - Johnston, Nick

AU - Mattioli Della Rocca, Francescopaolo

AU - Chen, Haochang

AU - Li, David Day-Uei

AU - Hungerford, Graham

AU - Hirsch, Richard

AU - Mcloskey, David

AU - Yip, Philip

AU - Birch, David J. S.

PY - 2019/7/31

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N2 - A 192 × 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4 μm × 9.2 μm pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps fullwidth half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

AB - A 192 × 128 pixel single photon avalanche diode (SPAD) time-resolved single photon counting (TCSPC) image sensor is implemented in STMicroelectronics 40-nm CMOS technology. The 13% fill factor, 18.4 μm × 9.2 μm pixel contains a 33-ps resolution, 135-ns full scale, 12-bit time-to-digital converter (TDC) with 0.9-LSB differential and 5.64-LSB integral nonlinearity (DNL/INL). The sensor achieves a mean 219-ps fullwidth half-maximum (FWHM) impulse response function (IRF) and is operable at up to 18.6 kframes/s through 64 parallelized serial outputs. Cylindrical microlenses with a concentration factor of 3.25 increase the fill factor to 42%. The median dark count rate (DCR) is 25 Hz at 1.5-V excess bias. A digital calibration scheme integrated into a column of the imager allows off-chip digital process, voltage, and temperature (PVT) compensation of every frame on the fly. Fluorescence lifetime imaging microscopy (FLIM) results are presented.

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DO - 10.1109/JSSC.2019.2905163

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

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ER -

A 192×128 Time Correlated SPAD Image Sensor in 40-nm CMOS Technology

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Projects

UK Quantum Technology Hub in Quantum Enhanced Imaging

Pilot Optical Line for Imaging and Sensing (POLIS)

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration

Profiles

Robert Henderson

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