A 2μm diameter, 9Hz dark count, single photon avalanche diode in 130nm CMOS technology

Justin A. Richardson, Lindsay A. Grant, Eric A.G. Webster, Robert K. Henderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

We report a CMOS single photon avalanche diode (SPAD) with a 2μm active diameter, 9Hz dark count rate at 20°C, photon detection efficiency peak of 14% at 500nm, implemented in a 130nm process technology. The implicit guard ring structure relies on retrograde well doping and overcomes a key problem in scaling SPAD devices to small dimensions. TCAD-based device simulations point the way to high resolution, high fill-factor single photon imaging.

Original languageEnglish
Title of host publication2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages257-260
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain
Duration: 14 Sept 201016 Sept 2010

Publication series

Name2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference2010 European Solid State Device Research Conference, ESSDERC 2010
Country/TerritorySpain
CitySevilla
Period14/09/1016/09/10

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