TY - GEN
T1 - A 2μm diameter, 9Hz dark count, single photon avalanche diode in 130nm CMOS technology
AU - Richardson, Justin A.
AU - Grant, Lindsay A.
AU - Webster, Eric A.G.
AU - Henderson, Robert K.
PY - 2010
Y1 - 2010
N2 - We report a CMOS single photon avalanche diode (SPAD) with a 2μm active diameter, 9Hz dark count rate at 20°C, photon detection efficiency peak of 14% at 500nm, implemented in a 130nm process technology. The implicit guard ring structure relies on retrograde well doping and overcomes a key problem in scaling SPAD devices to small dimensions. TCAD-based device simulations point the way to high resolution, high fill-factor single photon imaging.
AB - We report a CMOS single photon avalanche diode (SPAD) with a 2μm active diameter, 9Hz dark count rate at 20°C, photon detection efficiency peak of 14% at 500nm, implemented in a 130nm process technology. The implicit guard ring structure relies on retrograde well doping and overcomes a key problem in scaling SPAD devices to small dimensions. TCAD-based device simulations point the way to high resolution, high fill-factor single photon imaging.
UR - http://www.scopus.com/inward/record.url?scp=78649968364&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2010.5618371
DO - 10.1109/ESSDERC.2010.5618371
M3 - Conference contribution
AN - SCOPUS:78649968364
SN - 9781424466610
T3 - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
SP - 257
EP - 260
BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
T2 - 2010 European Solid State Device Research Conference, ESSDERC 2010
Y2 - 14 September 2010 through 16 September 2010
ER -