Abstract
A 3x3 prototype image sensor array consisting of 2µm diameter CMOS avalanche photodiodes with 3-transistor NMOS pixel circuitry is integrated in a 90nm CMOS image sensor technology. The 5µm pixel pitch is the smallest achieved to date and is obtained with < 1% crosstalk, 250Hz mean dark count rate (DCR) at 20C, 36% photon detection efficiency at 410nm (PDE) and 107ps FWHM jitter. The small pixel pitch makes it possible to recover the 12.5% fill factor by standard wafer-level microlenses. A 5-stage capacitive charge pump generates the 11V breakdown voltage from a standard 2.5V supply obviating external high voltage generation.
Original language | English |
---|---|
Title of host publication | IEEE International Electron Devices Meeting (IEDM) |
Place of Publication | NEW YORK |
Publisher | Institute of Electrical and Electronics Engineers |
Number of pages | 4 |
ISBN (Print) | 978-1-4244-7419-6 |
DOIs | |
Publication status | Published - Dec 2010 |
Event | IEEE International Electron Devices Meeting (IEDM) - San Francisco, United States Duration: 6 Dec 2010 → 8 Dec 2010 |
Conference
Conference | IEEE International Electron Devices Meeting (IEDM) |
---|---|
Country/Territory | United States |
City | San Francisco |
Period | 6/12/10 → 8/12/10 |