A Back-illuminated Voltage-domain Global Shutter Pixel with Dual In-pixel Storage

Laurence Stark; J. M. Raynor; Frederic Lalanne; Robert Henderson

doi:10.1109/TED.2018.2867367

A Back-illuminated Voltage-domain Global Shutter Pixel with Dual In-pixel Storage

Laurence Stark, J. M. Raynor, Frederic Lalanne, Robert Henderson

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

A 1024x800 image sensor with voltage-domain global shutter
pixels and dual in-pixel storage is implemented in a
90nm/65nm back-illuminated (BSI) imaging process. The
pixel has a 3.75μm pitch, achieves -80dB PLS operating in its
correlated double sampling mode and has a maximum
dynamic range in its high-dynamic range imaging mode of
102dB.

Original language	English
Pages (from-to)	4394-4400
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	10
Early online date	13 Sept 2018
DOIs	https://doi.org/10.1109/TED.2018.2867367
Publication status	Published - Oct 2018

Keywords / Materials (for Non-textual outputs)

Capacitors
photodiodes
capacitance
dynamic range
image capture
image sensors
CMOS image sensors
GS HDR image capture model
differential parasitic light sensitivities
high-dynamic-range imaging
10T pixel architecture
Dual in-pixel storage
back-illuminated voltage-domain global shutter pixel
active pixel sensors

Access to Document

10.1109/TED.2018.2867367

LS_GS_TED_July2018acceptedAccepted author manuscript, 1.35 MB

https://ieeexplore.ieee.org/document/8464680

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
Henderson, R.
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research

Cite this

@article{9d21169af319472d9bb08e1ec87a64bf,

title = "A Back-illuminated Voltage-domain Global Shutter Pixel with Dual In-pixel Storage",

abstract = "A 1024x800 image sensor with voltage-domain global shutterpixels and dual in-pixel storage is implemented in a90nm/65nm back-illuminated (BSI) imaging process. Thepixel has a 3.75μm pitch, achieves -80dB PLS operating in itscorrelated double sampling mode and has a maximumdynamic range in its high-dynamic range imaging mode of102dB.",

keywords = "Capacitors, photodiodes, capacitance, dynamic range, image capture, image sensors, CMOS image sensors, GS HDR image capture model, differential parasitic light sensitivities, high-dynamic-range imaging, 10T pixel architecture, Dual in-pixel storage, back-illuminated voltage-domain global shutter pixel, active pixel sensors",

author = "Laurence Stark and Raynor, {J. M.} and Frederic Lalanne and Robert Henderson",

year = "2018",

month = oct,

doi = "10.1109/TED.2018.2867367",

language = "English",

volume = "65",

pages = "4394--4400",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - A Back-illuminated Voltage-domain Global Shutter Pixel with Dual In-pixel Storage

AU - Stark, Laurence

AU - Raynor, J. M.

AU - Lalanne, Frederic

AU - Henderson, Robert

PY - 2018/10

Y1 - 2018/10

N2 - A 1024x800 image sensor with voltage-domain global shutterpixels and dual in-pixel storage is implemented in a90nm/65nm back-illuminated (BSI) imaging process. Thepixel has a 3.75μm pitch, achieves -80dB PLS operating in itscorrelated double sampling mode and has a maximumdynamic range in its high-dynamic range imaging mode of102dB.

AB - A 1024x800 image sensor with voltage-domain global shutterpixels and dual in-pixel storage is implemented in a90nm/65nm back-illuminated (BSI) imaging process. Thepixel has a 3.75μm pitch, achieves -80dB PLS operating in itscorrelated double sampling mode and has a maximumdynamic range in its high-dynamic range imaging mode of102dB.

KW - Capacitors

KW - photodiodes

KW - capacitance

KW - dynamic range

KW - image capture

KW - image sensors

KW - CMOS image sensors

KW - GS HDR image capture model

KW - differential parasitic light sensitivities

KW - high-dynamic-range imaging

KW - 10T pixel architecture

KW - Dual in-pixel storage

KW - back-illuminated voltage-domain global shutter pixel

KW - active pixel sensors

U2 - 10.1109/TED.2018.2867367

DO - 10.1109/TED.2018.2867367

M3 - Article

SN - 0018-9383

VL - 65

SP - 4394

EP - 4400

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

A Back-illuminated Voltage-domain Global Shutter Pixel with Dual In-pixel Storage

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

Access to Document

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Projects

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration

Cite this