A Back-illuminated Voltage-domain Global Shutter Pixel with Dual In-pixel Storage

Laurence Stark, J. M. Raynor, Frederic Lalanne, Robert Henderson

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

A 1024x800 image sensor with voltage-domain global shutter
pixels and dual in-pixel storage is implemented in a
90nm/65nm back-illuminated (BSI) imaging process. The
pixel has a 3.75μm pitch, achieves -80dB PLS operating in its
correlated double sampling mode and has a maximum
dynamic range in its high-dynamic range imaging mode of
Original languageEnglish
Pages (from-to)4394-4400
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number10
Early online date13 Sept 2018
Publication statusPublished - Oct 2018

Keywords / Materials (for Non-textual outputs)

  • Capacitors
  • photodiodes
  • capacitance
  • dynamic range
  • image capture
  • image sensors
  • CMOS image sensors
  • GS HDR image capture model
  • differential parasitic light sensitivities
  • high-dynamic-range imaging
  • 10T pixel architecture
  • Dual in-pixel storage
  • back-illuminated voltage-domain global shutter pixel
  • active pixel sensors


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