A CMOS Analog Front-End for Tunnelling Magnetoresistive Spintronic Sensing Systems

Siming Zuo; Hua Fan; Kianoush Nazarpour; Hadi Heidari

doi:10.1109/ISCAS.2019.8702219

A CMOS Analog Front-End for Tunnelling Magnetoresistive Spintronic Sensing Systems

Siming Zuo, Hua Fan, Kianoush Nazarpour, Hadi Heidari

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

This paper presents a CMOS readout circuit for an integrated and highly-sensitive tunnel-magnetoresistive (TMR) sensor. Based on the characterization of the TMR sensor in the finite-element simulation, using COMSOL Multiphysics, the circuit including a Wheatstone bridge and an analogue front-end (AFE) circuit, were designed to achieve low-noise and low-power sensing. We present a transimpedance amplifier (TIA) that biases and amplifies a TMR sensor array using switched-capacitors external noise filtering and allows the integration of TMR sensors on CMOS without decreasing the measurement resolution. Designed using TSMC 0.18 μm 1V technology, the amplifier consumes 160 nA at 1.8 V supply to achieve a dc gain of 118 dB and a bandwidth of 3.8 MHz. The results confirm that the full system is able to detect the magnetic field in the pico-Tesla range with low circuit noise (2.297 pA/√Hz) and low power consumption (86 μW). A concurrent reduction in the power consumption and attenuation of noise in TMR sensors makes them suitable for long-term deployment in spintronic sensing systems.

Original language	English
Title of host publication	2019 IEEE International Symposium on Circuits and Systems (ISCAS)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-5
Number of pages	5
ISBN (Print)	978-1-7281-0397-6
DOIs	https://doi.org/10.1109/ISCAS.2019.8702219
Publication status	Published - 1 May 2019
Event	IEEE International Symposium on Circuits and Systems 2019 - Sapporo, Japan Duration: 26 May 2020 → 29 May 2020 https://www.iscas2019.org/

Publication series

Name
Publisher	IEEE
ISSN (Print)	2158-1525

Symposium

Symposium	IEEE International Symposium on Circuits and Systems 2019
Abbreviated title	ISCAS 2019
Country/Territory	Japan
City	Sapporo
Period	26/05/20 → 29/05/20
Internet address	https://www.iscas2019.org/

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10.1109/ISCAS.2019.8702219Licence: All Rights Reserved

https://ieeexplore.ieee.org/abstract/document/8702219Licence: All Rights Reserved

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@inproceedings{d3cc49c35c77463e81a75caef86a2822,

title = "A CMOS Analog Front-End for Tunnelling Magnetoresistive Spintronic Sensing Systems",

abstract = "This paper presents a CMOS readout circuit for an integrated and highly-sensitive tunnel-magnetoresistive (TMR) sensor. Based on the characterization of the TMR sensor in the finite-element simulation, using COMSOL Multiphysics, the circuit including a Wheatstone bridge and an analogue front-end (AFE) circuit, were designed to achieve low-noise and low-power sensing. We present a transimpedance amplifier (TIA) that biases and amplifies a TMR sensor array using switched-capacitors external noise filtering and allows the integration of TMR sensors on CMOS without decreasing the measurement resolution. Designed using TSMC 0.18 μm 1V technology, the amplifier consumes 160 nA at 1.8 V supply to achieve a dc gain of 118 dB and a bandwidth of 3.8 MHz. The results confirm that the full system is able to detect the magnetic field in the pico-Tesla range with low circuit noise (2.297 pA/√Hz) and low power consumption (86 μW). A concurrent reduction in the power consumption and attenuation of noise in TMR sensors makes them suitable for long-term deployment in spintronic sensing systems.",

author = "Siming Zuo and Hua Fan and Kianoush Nazarpour and Hadi Heidari",

year = "2019",

month = may,

day = "1",

doi = "10.1109/ISCAS.2019.8702219",

language = "English",

isbn = "978-1-7281-0397-6",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

pages = "1--5",

booktitle = "2019 IEEE International Symposium on Circuits and Systems (ISCAS)",

address = "United States",

note = "IEEE International Symposium on Circuits and Systems 2019, ISCAS 2019 ; Conference date: 26-05-2020 Through 29-05-2020",

url = "https://www.iscas2019.org/",

}

Zuo, S, Fan, H, Nazarpour, K & Heidari, H 2019, A CMOS Analog Front-End for Tunnelling Magnetoresistive Spintronic Sensing Systems. in 2019 IEEE International Symposium on Circuits and Systems (ISCAS). Institute of Electrical and Electronics Engineers (IEEE), pp. 1-5, IEEE International Symposium on Circuits and Systems 2019, Sapporo, Japan, 26/05/20. https://doi.org/10.1109/ISCAS.2019.8702219

TY - GEN

T1 - A CMOS Analog Front-End for Tunnelling Magnetoresistive Spintronic Sensing Systems

AU - Zuo, Siming

AU - Fan, Hua

AU - Nazarpour, Kianoush

AU - Heidari, Hadi

PY - 2019/5/1

Y1 - 2019/5/1

N2 - This paper presents a CMOS readout circuit for an integrated and highly-sensitive tunnel-magnetoresistive (TMR) sensor. Based on the characterization of the TMR sensor in the finite-element simulation, using COMSOL Multiphysics, the circuit including a Wheatstone bridge and an analogue front-end (AFE) circuit, were designed to achieve low-noise and low-power sensing. We present a transimpedance amplifier (TIA) that biases and amplifies a TMR sensor array using switched-capacitors external noise filtering and allows the integration of TMR sensors on CMOS without decreasing the measurement resolution. Designed using TSMC 0.18 μm 1V technology, the amplifier consumes 160 nA at 1.8 V supply to achieve a dc gain of 118 dB and a bandwidth of 3.8 MHz. The results confirm that the full system is able to detect the magnetic field in the pico-Tesla range with low circuit noise (2.297 pA/√Hz) and low power consumption (86 μW). A concurrent reduction in the power consumption and attenuation of noise in TMR sensors makes them suitable for long-term deployment in spintronic sensing systems.

AB - This paper presents a CMOS readout circuit for an integrated and highly-sensitive tunnel-magnetoresistive (TMR) sensor. Based on the characterization of the TMR sensor in the finite-element simulation, using COMSOL Multiphysics, the circuit including a Wheatstone bridge and an analogue front-end (AFE) circuit, were designed to achieve low-noise and low-power sensing. We present a transimpedance amplifier (TIA) that biases and amplifies a TMR sensor array using switched-capacitors external noise filtering and allows the integration of TMR sensors on CMOS without decreasing the measurement resolution. Designed using TSMC 0.18 μm 1V technology, the amplifier consumes 160 nA at 1.8 V supply to achieve a dc gain of 118 dB and a bandwidth of 3.8 MHz. The results confirm that the full system is able to detect the magnetic field in the pico-Tesla range with low circuit noise (2.297 pA/√Hz) and low power consumption (86 μW). A concurrent reduction in the power consumption and attenuation of noise in TMR sensors makes them suitable for long-term deployment in spintronic sensing systems.

U2 - 10.1109/ISCAS.2019.8702219

DO - 10.1109/ISCAS.2019.8702219

M3 - Conference contribution

SN - 978-1-7281-0397-6

SP - 1

EP - 5

BT - 2019 IEEE International Symposium on Circuits and Systems (ISCAS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - IEEE International Symposium on Circuits and Systems 2019

Y2 - 26 May 2020 through 29 May 2020

ER -

A CMOS Analog Front-End for Tunnelling Magnetoresistive Spintronic Sensing Systems

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