A CMOS SPAD Sensor with a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-fast Optical Transient Capture

Tarek Al abbas; Neale Dutton; Oscar Almer; Neil Finlayson; Francescopaolo Mattioli Della Rocca; Robert Henderson

doi:10.1109/JSEN.2018.2803087

A CMOS SPAD Sensor with a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-fast Optical Transient Capture

Tarek Al abbas, Neale Dutton, Oscar Almer, Neil Finlayson, Francescopaolo Mattioli Della Rocca, Robert Henderson

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 × 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins × 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.

Original language	English
Pages (from-to)	3163-3173
Number of pages	11
Journal	IEEE Sensors Journal
Volume	18
Issue number	8
Early online date	6 Feb 2018
DOIs	https://doi.org/10.1109/JSEN.2018.2803087
Publication status	Published - 15 Apr 2018

Keywords / Materials (for Non-textual outputs)

time to digital converter
Single Photon Avalanche Diode
optical sensor
CMOS
silicone photomultiplier

Access to Document

10.1109/JSEN.2018.2803087

IEEE_Sensors_Paper_METDC_V24Accepted author manuscript, 1.49 MB

Ultrafast Imaging using Quantum Technologies (ULTRA-IMAGE)
Henderson, R. (Principal Investigator)
EPSRC
1/02/15 → 31/01/18
Project: Research
Multiplexed 'Touch and Tell' Optical Molecular Sensing and Imaging
Henderson, R. (Principal Investigator)
EPSRC
1/10/13 → 31/03/19
Project: Research
PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
Henderson, R. (Principal Investigator)
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research

Robert Henderson
- Robert.Hendersoned.acuk
- School of Engineering - Personal Chair of Electronic Imaging
Person: Academic: Research Active

Cite this

@article{511f7e6e27024eb99a42f456fb034b6e,

title = "A CMOS SPAD Sensor with a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-fast Optical Transient Capture",

abstract = "A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 × 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins × 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.",

keywords = "time to digital converter, Single Photon Avalanche Diode, optical sensor, CMOS, silicone photomultiplier",

author = "{Al abbas}, Tarek and Neale Dutton and Oscar Almer and Neil Finlayson and {Mattioli Della Rocca}, Francescopaolo and Robert Henderson",

year = "2018",

month = apr,

day = "15",

doi = "10.1109/JSEN.2018.2803087",

language = "English",

volume = "18",

pages = "3163--3173",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers",

number = "8",

}

TY - JOUR

T1 - A CMOS SPAD Sensor with a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-fast Optical Transient Capture

AU - Al abbas, Tarek

AU - Dutton, Neale

AU - Almer, Oscar

AU - Finlayson, Neil

AU - Mattioli Della Rocca, Francescopaolo

AU - Henderson, Robert

PY - 2018/4/15

Y1 - 2018/4/15

N2 - A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 × 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins × 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.

AB - A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 × 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins × 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.

KW - time to digital converter

KW - Single Photon Avalanche Diode

KW - optical sensor

KW - CMOS

KW - silicone photomultiplier

U2 - 10.1109/JSEN.2018.2803087

DO - 10.1109/JSEN.2018.2803087

M3 - Article

SN - 1530-437X

VL - 18

SP - 3163

EP - 3173

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 8

ER -

A CMOS SPAD Sensor with a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-fast Optical Transient Capture

Abstract

Keywords / Materials (for Non-textual outputs)

Access to Document

Fingerprint

Projects

Ultrafast Imaging using Quantum Technologies (ULTRA-IMAGE)

Multiplexed 'Touch and Tell' Optical Molecular Sensing and Imaging

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration

Profiles

Robert Henderson

Cite this