A CMOS SPAD Sensor with a Multi-Event Folded Flash Time-to-Digital Converter for Ultra-fast Optical Transient Capture

Tarek Al abbas, Neale Dutton, Oscar Almer, Neil Finlayson, Francescopaolo Mattioli Della Rocca, Robert Henderson

Research output: Contribution to journalArticlepeer-review

Abstract

A digital silicon photomultiplier in 130-nm CMOS imaging technology implements time-correlated single photon counting at an order of magnitude beyond the conventional pile-up limit. The sensor comprises a 32 × 32 43% fill-factor single photon avalanche diode array with a multi-event folded-flash time-to-digital converter architecture operating at 10 GS/s. 264 bins × 16 bit histograms are generated and read out from the chip at a maximal 188 kHz enabling fast time resolved scanning or ultrafast low-light event capture. Full optical and electrical characterization results are presented.
Original languageEnglish
Pages (from-to)3163-3173
Number of pages11
JournalIEEE Sensors Journal
Volume18
Issue number8
Early online date6 Feb 2018
DOIs
Publication statusPublished - 15 Apr 2018

Keywords

  • time to digital converter
  • Single Photon Avalanche Diode
  • optical sensor
  • CMOS
  • silicone photomultiplier

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