A Dual-Junction Single-Photon Avalanche Diode in 130nm CMOS Technology

Robert Henderson, E.A.G. Webster, Lindsay A. Grant

Research output: Contribution to journalArticlepeer-review

Abstract

A dual-junction single-photon avalanche diode
(SPAD) structure is reported in a 130nm low-voltage CMOS
technology. The device comprises two stacked avalanche
multiplication regions with virtual guard ring constructions. A
8.6mm diameter p-well is placed within a 12.3mm diameter deep nwell.
At 3V excess bias, the junctions operate with median dark
count rates (DCR) of 10kHz and 5kHz, photon detection
efficiencies (PDE) of 32% at 450nm and 29% at 670nm
respectively. We demonstrate that the junction at which a photon
is detected can be uniquely distinguished by the dead time of the
Geiger mode pulse allowing spectral discrimination by simple
digital circuitry.
Original languageEnglish
Pages (from-to)429-431
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number3
Publication statusPublished - Mar 2013

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