Abstract
A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metaloxidesemiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.
Original language | English |
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Article number | 5699339 |
Pages (from-to) | 417-419 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 3 |
DOIs | |
Publication status | Published - 20 Jan 2011 |
Keywords / Materials (for Non-textual outputs)
- Chemical sensor
- discrete ion-sensitive field-effect transistor (ISFET)
- extended gate