A low-cost disposable chemical sensing platform based on discrete components

Themistoklis Prodromakis; Yan Liu; Chris Toumazou

doi:10.1109/LED.2010.2099098

A low-cost disposable chemical sensing platform based on discrete components

Themistoklis Prodromakis^*
, Yan Liu
, Chris Toumazou

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metaloxidesemiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.

Original language	English
Article number	5699339
Pages (from-to)	417-419
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2099098
Publication status	Published - 20 Jan 2011

Keywords / Materials (for Non-textual outputs)

Chemical sensor
discrete ion-sensitive field-effect transistor (ISFET)
extended gate

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10.1109/LED.2010.2099098

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abstract = "A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metaloxidesemiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.",

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AU - Toumazou, Chris

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N2 - A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metaloxidesemiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.

AB - A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metaloxidesemiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique has a great potential for disposable implementations, while the sensing selectivity of the device can be easily altered, resulting into a versatile platform.

KW - Chemical sensor

KW - discrete ion-sensitive field-effect transistor (ISFET)

KW - extended gate

UR - https://www.scopus.com/pages/publications/79951941996

U2 - 10.1109/LED.2010.2099098

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JF - IEEE Electron Device Letters

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M1 - 5699339

ER -

A low-cost disposable chemical sensing platform based on discrete components

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Keywords / Materials (for Non-textual outputs)

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