A <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>-Controller-Based System for Interfacing Selectorless RRAM Crossbar Arrays

Radu Berdan, Alexander Serb, Ali Khiat, Anna Regoutz, Christos Papavassiliou, Themis Prodromakis

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Selectorless crossbar arrays of resistive randomaccess memory (RRAM), also known as memristors, conduct large sneak currents during operation, which can significantly corrupt the accuracy of cross-point analog resistance (M t ) measurements. In order to mitigate this issue, we have designed, built, and tested a memristor characterization and testing (mCAT) instrument that forces redistribution of sneak currents within the crossbar array, dramatically increasing M t measurement accuracy. We calibrated the mCAT using a custom-made 32 × 32 discrete resistive crossbar array, and subsequently demonstrated its functionality on solid-state TiO 2-x RRAM arrays, on wafer and packaged, of the same size. Our platform can measure standalone M t in the range of 1 kΩ to 1 MΩ with <;1% error. For our custom resistive crossbar, 90% of devices of the same resistance range were measured with <;10% error. The platform's limitations have been quantified using large-scale nonideal crossbar simulations.
Original languageUndefined/Unknown
Pages (from-to) 2190 - 2196
JournalIEEE Transactions on Electron Devices
Issue number7
Publication statusPublished - 1 Jun 2015

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