A memristor SPICE model accounting for volatile characteristics of practical ReRAM

Radu Berdan, Chuan Lim, Ali Khiat, Christos Papavassiliou, Themis Prodromakis

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Realizing large-scale circuits utilizing emerging nanoionic devices known as memristors depends on the accurate modeling of their behavior under a wide range of biasing conditions. Currently, no available SPICE memristor model accounts for both nonvolatile and volatile resistive switching characteristics, the coexistence of which has been recently demonstrated to manifest on practical ReRAM. In this letter, we present a new memristor SPICE model that introduces volatile effects, which can render a rate-dependent bipolar nonvolatile switching operation. The model is demonstrated via a number of simulation cases and is benchmarked against measured results acquired by solid-state TiO 2 ReRAM.

Original languageEnglish
Article number6680642
Pages (from-to)135-137
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
Publication statusPublished - 11 Dec 2013

Keywords / Materials (for Non-textual outputs)

  • memristive devices
  • Memristor
  • model
  • non-volatile
  • ReRAM
  • SPICE
  • TiO
  • volatility

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