A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics

D. M. Glowacka, D. J. Goldie, S. Withington, M. Crane, V. Tsaneva, M. D. Audley, A. Bunting

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current and future astronomical instruments require large arrays of Superconducting Transition Edge Sensors (TESs). Of particular importance are microstrip-coupled TESs, where the incoming signal is delivered onto a silicon nitride membrane by means of a superconducting microstrip transmission tine. This transmission line is then terminated with a thin-film load. We report on a wafer-based fabrication route for Molybdenum/Copper microstrip-coupled TESs that gives highly reproducible superconducting transition temperatures, and electrical and thermal parameters. Although a large array of voltage-biased TESs will operate satisfactorily with widely varying individual pixel characteristics, uniformity of the characteristics is clearly advantageous from art operational point of view in terms pixel to pixel variations in responsivity, power handling and noise. An overall device yield of 65% has been achieved for our first multi-wafer production run.

Original languageEnglish
Title of host publication2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages449-450
Number of pages2
ISBN (Print)978-1-4244-1438-3
Publication statusPublished - 2007
EventJoint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics - Cardiff
Duration: 3 Sep 20079 Sep 2007

Conference

ConferenceJoint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics
CityCardiff
Period3/09/079/09/07

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