A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics

D. M. Glowacka; D. J. Goldie; S. Withington; M. Crane; V. Tsaneva; M. D. Audley; A. Bunting

A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics

D. M. Glowacka, D. J. Goldie, S. Withington, M. Crane, V. Tsaneva, M. D. Audley, A. Bunting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

Current and future astronomical instruments require large arrays of Superconducting Transition Edge Sensors (TESs). Of particular importance are microstrip-coupled TESs, where the incoming signal is delivered onto a silicon nitride membrane by means of a superconducting microstrip transmission tine. This transmission line is then terminated with a thin-film load. We report on a wafer-based fabrication route for Molybdenum/Copper microstrip-coupled TESs that gives highly reproducible superconducting transition temperatures, and electrical and thermal parameters. Although a large array of voltage-biased TESs will operate satisfactorily with widely varying individual pixel characteristics, uniformity of the characteristics is clearly advantageous from art operational point of view in terms pixel to pixel variations in responsivity, power handling and noise. An overall device yield of 65% has been achieved for our first multi-wafer production run.

Original language	English
Title of host publication	2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	449-450
Number of pages	2
ISBN (Print)	978-1-4244-1438-3
Publication status	Published - 2007
Event	Joint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics - Cardiff Duration: 3 Sept 2007 → 9 Sept 2007

Conference

Conference	Joint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics
City	Cardiff
Period	3/09/07 → 9/09/07

Cite this

Glowacka, D. M., Goldie, D. J., Withington, S., Crane, M., Tsaneva, V., Audley, M. D., & Bunting, A. (2007). A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics. In 2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2 (pp. 449-450). Institute of Electrical and Electronics Engineers (IEEE).

Glowacka, D. M. ; Goldie, D. J. ; Withington, S. et al. / A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics. 2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2. NEW YORK : Institute of Electrical and Electronics Engineers (IEEE), 2007. pp. 449-450

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title = "A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics",

abstract = "Current and future astronomical instruments require large arrays of Superconducting Transition Edge Sensors (TESs). Of particular importance are microstrip-coupled TESs, where the incoming signal is delivered onto a silicon nitride membrane by means of a superconducting microstrip transmission tine. This transmission line is then terminated with a thin-film load. We report on a wafer-based fabrication route for Molybdenum/Copper microstrip-coupled TESs that gives highly reproducible superconducting transition temperatures, and electrical and thermal parameters. Although a large array of voltage-biased TESs will operate satisfactorily with widely varying individual pixel characteristics, uniformity of the characteristics is clearly advantageous from art operational point of view in terms pixel to pixel variations in responsivity, power handling and noise. An overall device yield of 65% has been achieved for our first multi-wafer production run.",

author = "Glowacka, {D. M.} and Goldie, {D. J.} and S. Withington and M. Crane and V. Tsaneva and Audley, {M. D.} and A. Bunting",

year = "2007",

language = "English",

isbn = "978-1-4244-1438-3",

pages = "449--450",

booktitle = "2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Joint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics ; Conference date: 03-09-2007 Through 09-09-2007",

}

Glowacka, DM, Goldie, DJ, Withington, S, Crane, M, Tsaneva, V, Audley, MD & Bunting, A 2007, A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics. in 2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2. Institute of Electrical and Electronics Engineers (IEEE), NEW YORK, pp. 449-450, Joint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics, Cardiff, 3/09/07.

A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics. / Glowacka, D. M.; Goldie, D. J.; Withington, S. et al.
2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2. NEW YORK: Institute of Electrical and Electronics Engineers (IEEE), 2007. p. 449-450.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics

AU - Glowacka, D. M.

AU - Goldie, D. J.

AU - Withington, S.

AU - Crane, M.

AU - Tsaneva, V.

AU - Audley, M. D.

AU - Bunting, A.

PY - 2007

Y1 - 2007

N2 - Current and future astronomical instruments require large arrays of Superconducting Transition Edge Sensors (TESs). Of particular importance are microstrip-coupled TESs, where the incoming signal is delivered onto a silicon nitride membrane by means of a superconducting microstrip transmission tine. This transmission line is then terminated with a thin-film load. We report on a wafer-based fabrication route for Molybdenum/Copper microstrip-coupled TESs that gives highly reproducible superconducting transition temperatures, and electrical and thermal parameters. Although a large array of voltage-biased TESs will operate satisfactorily with widely varying individual pixel characteristics, uniformity of the characteristics is clearly advantageous from art operational point of view in terms pixel to pixel variations in responsivity, power handling and noise. An overall device yield of 65% has been achieved for our first multi-wafer production run.

AB - Current and future astronomical instruments require large arrays of Superconducting Transition Edge Sensors (TESs). Of particular importance are microstrip-coupled TESs, where the incoming signal is delivered onto a silicon nitride membrane by means of a superconducting microstrip transmission tine. This transmission line is then terminated with a thin-film load. We report on a wafer-based fabrication route for Molybdenum/Copper microstrip-coupled TESs that gives highly reproducible superconducting transition temperatures, and electrical and thermal parameters. Although a large array of voltage-biased TESs will operate satisfactorily with widely varying individual pixel characteristics, uniformity of the characteristics is clearly advantageous from art operational point of view in terms pixel to pixel variations in responsivity, power handling and noise. An overall device yield of 65% has been achieved for our first multi-wafer production run.

M3 - Conference contribution

SN - 978-1-4244-1438-3

SP - 449

EP - 450

BT - 2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - NEW YORK

T2 - Joint 32nd International Conference on Infrared and Millimeter Waves/15th International Conference on Terahertz Electronics

Y2 - 3 September 2007 through 9 September 2007

ER -

Glowacka DM, Goldie DJ, Withington S, Crane M, Tsaneva V, Audley MD et al. A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics. In 2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2. NEW YORK: Institute of Electrical and Electronics Engineers (IEEE). 2007. p. 449-450

A process route for fabricating microstrip-coupled Superconducting Transition Edge Sensors giving well-controlled device characteristics

Abstract / Description of output

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