Abstract / Description of output
A 16×16 Silicon Photomultiplier (SiPM) is reported
in a 130nm CMOS imaging technology with a photon detection
probability of >30% from 450-750nm. The SiPM demonstrates a
21.6% fill factor with an 11.6μm pitch and 8μm diameter Single-
Photon Avalanche Diodes (SPADs). This is achieved using a
new SPAD structure with integrated resistor and capacitor.
NMOS-only pixel electronics are used to improve fill factor and
to implement an addressable array of SPADs that are isolated
from the array and column load. A 1T DRAM in each pixel is
implemented to inhibit the output of high dark count rate (DCR)
SPADs. The SiPM also achieves: a median DCR of ≈200Hz at
1.2V excess bias; low after pulsing; and a SPAD timing jitter of
≈95ps at 654nm with a column delay of ≈100-200ps.
in a 130nm CMOS imaging technology with a photon detection
probability of >30% from 450-750nm. The SiPM demonstrates a
21.6% fill factor with an 11.6μm pitch and 8μm diameter Single-
Photon Avalanche Diodes (SPADs). This is achieved using a
new SPAD structure with integrated resistor and capacitor.
NMOS-only pixel electronics are used to improve fill factor and
to implement an addressable array of SPADs that are isolated
from the array and column load. A 1T DRAM in each pixel is
implemented to inhibit the output of high dark count rate (DCR)
SPADs. The SiPM also achieves: a median DCR of ≈200Hz at
1.2V excess bias; low after pulsing; and a SPAD timing jitter of
≈95ps at 654nm with a column delay of ≈100-200ps.
| Original language | English |
|---|---|
| Pages | 238-241 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - Sept 2012 |
| Event | European Solid-State Device Research Conference - Bordeaux, France Duration: 17 Sept 2012 → 21 Sept 2012 |
Conference
| Conference | European Solid-State Device Research Conference |
|---|---|
| Country/Territory | France |
| City | Bordeaux |
| Period | 17/09/12 → 21/09/12 |