A silicon photomultiplier with >30% detection efficiency from 450-750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS

E.A.G. Webster, Richard Walker, Lindsay A. Grant, Robert Henderson

Research output: Contribution to conferencePaperpeer-review

Abstract

A 16×16 Silicon Photomultiplier (SiPM) is reported
in a 130nm CMOS imaging technology with a photon detection
probability of >30% from 450-750nm. The SiPM demonstrates a
21.6% fill factor with an 11.6μm pitch and 8μm diameter Single-
Photon Avalanche Diodes (SPADs). This is achieved using a
new SPAD structure with integrated resistor and capacitor.
NMOS-only pixel electronics are used to improve fill factor and
to implement an addressable array of SPADs that are isolated
from the array and column load. A 1T DRAM in each pixel is
implemented to inhibit the output of high dark count rate (DCR)
SPADs. The SiPM also achieves: a median DCR of ≈200Hz at
1.2V excess bias; low after pulsing; and a SPAD timing jitter of
≈95ps at 654nm with a column delay of ≈100-200ps.
Original languageEnglish
Pages238-241
Number of pages4
DOIs
Publication statusPublished - Sep 2012
EventEuropean Solid-State Device Research Conference - Bordeaux, France
Duration: 17 Sep 201221 Sep 2012

Conference

ConferenceEuropean Solid-State Device Research Conference
CountryFrance
CityBordeaux
Period17/09/1221/09/12

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