Projects per year
Abstract / Description of output
A Single Electron Bipolar Avalanche Transistor (SEBAT) with attoampere sensitivity and 10 Hz off-count
rate is successfully integrated into 90 nm CMOS. The reported SEBAT has 120 dB (10 Hz–10 MHz)
dynamic range corresponding to 0–0.35 VBE, and an IE 1018–1012 A. Single-transistor ADC operation
of the SEBAT is demonstrated by AC-coupling signals into the base
rate is successfully integrated into 90 nm CMOS. The reported SEBAT has 120 dB (10 Hz–10 MHz)
dynamic range corresponding to 0–0.35 VBE, and an IE 1018–1012 A. Single-transistor ADC operation
of the SEBAT is demonstrated by AC-coupling signals into the base
Original language | English |
---|---|
Pages (from-to) | 116-118 |
Number of pages | 3 |
Journal | Solid-State Electronics |
Early online date | 29 Jun 2012 |
Publication status | Published - Jun 2012 |
Fingerprint
Dive into the research topics of 'A single electron bipolar avalanche transistor implemented in 90 nm CMOS'. Together they form a unique fingerprint.Projects
- 1 Finished
-
PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research