A single electron bipolar avalanche transistor implemented in 90 nm CMOS

E.A.G. Webster, J. Richardson, L. A. Grant, Robert Henderson

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

A Single Electron Bipolar Avalanche Transistor (SEBAT) with attoampere sensitivity and 10 Hz off-count
rate is successfully integrated into 90 nm CMOS. The reported SEBAT has 120 dB (10 Hz–10 MHz)
dynamic range corresponding to 0–0.35 VBE, and an IE 1018–1012 A. Single-transistor ADC operation
of the SEBAT is demonstrated by AC-coupling signals into the base
Original languageEnglish
Pages (from-to)116-118
Number of pages3
JournalSolid-State Electronics
Early online date29 Jun 2012
Publication statusPublished - Jun 2012

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