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Abstract / Description of output
A CMOS and back-side illumination-compatible single-photon avalanche diode (SPAD) is reported in 90-nm imaging technology with a peak photon detection efficiency of ≈ 44% at 690 nm and better than ≈20% at 850 nm. This represents an approximately eightfold improvement in near infrared sensitivity over existing CMOS SPADs. This result has important implications for optical communications, time-of-flight ranging, and optical tomography applications. The 6.4-μm-diameter SPAD also achieves the following: low dark count rates of ≈100 Hz with ≈51-ps FWHM timing resolution and a low after-pulsing probability of ≈0.375%.
Original language | English |
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Pages (from-to) | 694 - 696 |
Journal | IEEE Electron Device Letters |
Volume | 33 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2012 |
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Dive into the research topics of 'A Single-Photon Avalanche Diode in 90nm CMOS imaging technology with 44% photon detection efficiency at 690nm'. Together they form a unique fingerprint.Projects
- 1 Finished
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PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research