A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

M. Gersbach; Y. Maruyama; R.  Trimananda; Matthew Fishburn; David Stoppa; J. Richardson; Richard Walker; Robert Henderson; Edoardo Charbon

doi:10.1109/JSSC.2012.2188466

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

M. Gersbach, Y. Maruyama, R. Trimananda, Matthew Fishburn, David Stoppa, J. Richardson, Richard Walker, Robert Henderson, Edoardo Charbon

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.

Original language	English
Pages (from-to)	1394-1407
Number of pages	14
Journal	IEEE Journal of Solid-State Circuits
Volume	47
Issue number	6
DOIs	https://doi.org/10.1109/JSSC.2012.2188466
Publication status	Published - 1 Jun 2012

Keywords

FCS
FLIM
SPAD
Single-photon imaging
TDC
fluorescence correlation spectroscopy

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10.1109/JSSC.2012.2188466

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6176268

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1 Finished

MEGAFRAME: MEGAFRAME: Million Frame Per Second, Time Correlated Single Photon Camera
Henderson, R. & Crain, J.
EU government bodies
1/06/06 → 30/04/10
Project: Research

Cite this

@article{47aff2278a0243a3995ec464ea705735,

title = "A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology",

abstract = "We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.",

keywords = "FCS, FLIM, SPAD, Single-photon imaging, TDC, fluorescence correlation spectroscopy",

author = "M. Gersbach and Y. Maruyama and R. Trimananda and Matthew Fishburn and David Stoppa and J. Richardson and Richard Walker and Robert Henderson and Edoardo Charbon",

year = "2012",

month = jun,

day = "1",

doi = "10.1109/JSSC.2012.2188466",

language = "English",

volume = "47",

pages = "1394--1407",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology. / Gersbach, M.; Maruyama, Y.; Trimananda, R. ; Fishburn, Matthew; Stoppa, David; Richardson, J.; Walker, Richard; Henderson, Robert; Charbon, Edoardo.

In: IEEE Journal of Solid-State Circuits, Vol. 47, No. 6, 01.06.2012, p. 1394-1407.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

AU - Gersbach, M.

AU - Maruyama, Y.

AU - Trimananda, R.

AU - Fishburn, Matthew

AU - Stoppa, David

AU - Richardson, J.

AU - Walker, Richard

AU - Henderson, Robert

AU - Charbon, Edoardo

PY - 2012/6/1

Y1 - 2012/6/1

N2 - We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.

AB - We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.

KW - FCS

KW - FLIM

KW - SPAD

KW - Single-photon imaging

KW - TDC

KW - fluorescence correlation spectroscopy

U2 - 10.1109/JSSC.2012.2188466

DO - 10.1109/JSSC.2012.2188466

M3 - Article

VL - 47

SP - 1394

EP - 1407

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 6

ER -

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

Abstract

Keywords

Access to Document

MEGAFRAME: MEGAFRAME: Million Frame Per Second, Time Correlated Single Photon Camera

Cite this