TY - GEN
T1 - A TiO2-based volatile threshold switching selector device with 107 non linearity and sub 100 pA off current
AU - Cortese, Simone
AU - Trapatseli, Maria
AU - Khiat, Ali
AU - Prodromakis, Themistoklis
PY - 2016/5/30
Y1 - 2016/5/30
N2 - ReRAM crossbar arrays are known to be susceptible to the presence of the sneak current issue during the readout operations which undermines crossbar scaling. This problem can be solved by the addition of an highly non-linear two-Terminal selector device. In this work we present a 5 nm thick TiO2-based selector which exploits a volatile threshold resistive switching, so far unreported for this material. The device shows a current density up to 100 kA/cm2, 107 current non-linearity and a 4 V voltage margin, the highest reported for TiO2-based selectors and sub 100 pA off current.
AB - ReRAM crossbar arrays are known to be susceptible to the presence of the sneak current issue during the readout operations which undermines crossbar scaling. This problem can be solved by the addition of an highly non-linear two-Terminal selector device. In this work we present a 5 nm thick TiO2-based selector which exploits a volatile threshold resistive switching, so far unreported for this material. The device shows a current density up to 100 kA/cm2, 107 current non-linearity and a 4 V voltage margin, the highest reported for TiO2-based selectors and sub 100 pA off current.
UR - https://www.scopus.com/pages/publications/84978634432
U2 - 10.1109/VLSI-TSA.2016.7480484
DO - 10.1109/VLSI-TSA.2016.7480484
M3 - Conference contribution
AN - SCOPUS:84978634432
T3 - 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
BT - 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
PB - Institute of Electrical and Electronics Engineers
T2 - International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
Y2 - 25 April 2016 through 27 April 2016
ER -