A versatile memristor model with nonlinear dopant kinetics

Themistoklis Prodromakis*, Boon Pin Peh, Christos Papavassiliou, Christofer Toumazou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

The need for reliable models that take into account the nonlinear kinetics of dopants is nowadays of paramount importance, particularly with the physical dimensions of electron devices shrinking to the deep nanoscale range and the development of emerging nanoionic systems such as the memristor. In this paper, we present a novel nonlinear dopant drift model that resolves the boundary issues existing in previously reported models that can be easily adjusted to match the dynamics of distinct memristive elements. With the aid of this model, we examine switching mechanisms, current-voltage characteristics, and the collective ion transport in two terminal memristive devices, providing new insights on memristive behavior.

Original languageEnglish
Article number5934403
Pages (from-to)3099-3105
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number9
Publication statusPublished - 27 Jun 2011

Keywords / Materials (for Non-textual outputs)

  • Memristive devices
  • memristor
  • memristor model
  • nonlinear dopant kinetics


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