Accelerated Electron Detection using Single Photon Avalanche Diodes

Anthony Bulling; Ian Underwood

doi:10.1109/ICSENS.2018.8589781

Accelerated Electron Detection using Single Photon Avalanche Diodes

Anthony Bulling, Ian Underwood

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

We present the first reported use of CMOS compatible Single Photon Avalanche Diodes (SPAD) arrays for the detection of accelerated electrons, with the use of 3D- stacked backside illuminated (BSI) SPADs, and a Scanning Electron Microscope (SEM). We detected electrons at electron energies from 5 to 30 keV. This unveils an array of novel application detection opportunities for SPADs in particle radiation environments, taking advantage of their inherent sensitivity and timing capabilities, along with all the usual benefits associated with CMOS devices.

Original language	English
Title of host publication	2018 IEEE SENSORS Proceedings
Place of Publication	USA
Publisher	Institute of Electrical and Electronics Engineers
Pages	621-4
Number of pages	4
ISBN (Electronic)	978-1-5386-4707-3
ISBN (Print)	978-1-5386-4708-0
DOIs	https://doi.org/10.1109/ICSENS.2018.8589781
Publication status	Published - 28 Oct 2018
Event	IEEE Sensors 2018 - Pullman New Delhi Aerocity, New Delhi, India Duration: 28 Oct 2018 → 31 Oct 2018 http://ieee-sensors2018.org

Publication series

Name	IEEE Sensors
Publisher	IEEE
ISSN (Print)	1930-0395
ISSN (Electronic)	2168-9229

Conference

Conference	IEEE Sensors 2018
Country/Territory	India
City	New Delhi
Period	28/10/18 → 31/10/18
Internet address	http://ieee-sensors2018.org

Keywords / Materials (for Non-textual outputs)

image sensors
Acceleration
electron sources
Photonics
Detectors
Silicon
radiation effects

Access to Document

10.1109/ICSENS.2018.8589781

Cite this

@inproceedings{a1193721541f4ddf90bc6a4811cf1906,

title = "Accelerated Electron Detection using Single Photon Avalanche Diodes",

abstract = "We present the first reported use of CMOS compatible Single Photon Avalanche Diodes (SPAD) arrays for the detection of accelerated electrons, with the use of 3D- stacked backside illuminated (BSI) SPADs, and a Scanning Electron Microscope (SEM). We detected electrons at electron energies from 5 to 30 keV. This unveils an array of novel application detection opportunities for SPADs in particle radiation environments, taking advantage of their inherent sensitivity and timing capabilities, along with all the usual benefits associated with CMOS devices.",

keywords = "image sensors, Acceleration, electron sources, Photonics, Detectors, Silicon, radiation effects",

author = "Anthony Bulling and Ian Underwood",

note = "Acceptance date set to exclude from REF OA Policy ; IEEE Sensors 2018 ; Conference date: 28-10-2018 Through 31-10-2018",

year = "2018",

month = oct,

day = "28",

doi = "10.1109/ICSENS.2018.8589781",

language = "English",

isbn = "978-1-5386-4708-0",

series = "IEEE Sensors",

publisher = "Institute of Electrical and Electronics Engineers",

pages = "621--4",

booktitle = "2018 IEEE SENSORS Proceedings",

address = "United States",

url = "http://ieee-sensors2018.org",

}

TY - GEN

T1 - Accelerated Electron Detection using Single Photon Avalanche Diodes

AU - Bulling, Anthony

AU - Underwood, Ian

N1 - Acceptance date set to exclude from REF OA Policy

PY - 2018/10/28

Y1 - 2018/10/28

N2 - We present the first reported use of CMOS compatible Single Photon Avalanche Diodes (SPAD) arrays for the detection of accelerated electrons, with the use of 3D- stacked backside illuminated (BSI) SPADs, and a Scanning Electron Microscope (SEM). We detected electrons at electron energies from 5 to 30 keV. This unveils an array of novel application detection opportunities for SPADs in particle radiation environments, taking advantage of their inherent sensitivity and timing capabilities, along with all the usual benefits associated with CMOS devices.

AB - We present the first reported use of CMOS compatible Single Photon Avalanche Diodes (SPAD) arrays for the detection of accelerated electrons, with the use of 3D- stacked backside illuminated (BSI) SPADs, and a Scanning Electron Microscope (SEM). We detected electrons at electron energies from 5 to 30 keV. This unveils an array of novel application detection opportunities for SPADs in particle radiation environments, taking advantage of their inherent sensitivity and timing capabilities, along with all the usual benefits associated with CMOS devices.

KW - image sensors

KW - Acceleration

KW - electron sources

KW - Photonics

KW - Detectors

KW - Silicon

KW - radiation effects

U2 - 10.1109/ICSENS.2018.8589781

DO - 10.1109/ICSENS.2018.8589781

M3 - Conference contribution

SN - 978-1-5386-4708-0

T3 - IEEE Sensors

SP - 621

EP - 624

BT - 2018 IEEE SENSORS Proceedings

PB - Institute of Electrical and Electronics Engineers

CY - USA

T2 - IEEE Sensors 2018

Y2 - 28 October 2018 through 31 October 2018

ER -

Accelerated Electron Detection using Single Photon Avalanche Diodes

Abstract / Description of output

Publication series

Conference

Keywords / Materials (for Non-textual outputs)

Access to Document

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Cite this