Accelerated Electron Detection using Single Photon Avalanche Diodes

Anthony Bulling, Ian Underwood

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present the first reported use of CMOS compatible Single Photon Avalanche Diodes (SPAD) arrays for the detection of accelerated electrons, with the use of 3D- stacked backside illuminated (BSI) SPADs, and a Scanning Electron Microscope (SEM). We detected electrons at electron energies from 5 to 30 keV. This unveils an array of novel application detection opportunities for SPADs in particle radiation environments, taking advantage of their inherent sensitivity and timing capabilities, along with all the usual benefits associated with CMOS devices.
Original languageEnglish
Title of host publication2018 IEEE SENSORS Proceedings
Place of PublicationUSA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)978-1-5386-4707-3
ISBN (Print)978-1-5386-4708-0
Publication statusPublished - 28 Oct 2018
EventIEEE Sensors 2018 - Pullman New Delhi Aerocity, New Delhi, India
Duration: 28 Oct 201831 Oct 2018

Publication series

NameIEEE Sensors
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229


ConferenceIEEE Sensors 2018
CityNew Delhi
Internet address


  • image sensors
  • Acceleration
  • electron sources
  • Photonics
  • Detectors
  • Silicon
  • radiation effects

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