An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects

H. Lin, S. Smith, Tom Stevenson, A. M. Gundlach, Camelia Dunare, Anthony Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

This paper evaluates test structures designed to characterise electrical contacts between interconnect on bonded wafers. Both simulation and experimental measurements are used to explore the capability of a stacked Greek cross type test structure to extract the contact resistivity (p.) between two bonded conductive layers. It is concluded from the simulations and actual electrical measurements of the benchmark Kelvin structures that the stacked Greek cross can only be used where there is a relatively high specific contact resistivity. For the structures evaluated in this study, this was found to be greater than p(c) >= 9.0 x 10(-7) Omega center dot cm(2).

Original languageEnglish
Title of host publication2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages123-127
Number of pages5
ISBN (Print)978-1-4244-1800-8
Publication statusPublished - 2008
EventIEEE International Conference on Microelectronic Test Structures - Edinburgh
Duration: 24 Mar 200827 Mar 2008

Conference

ConferenceIEEE International Conference on Microelectronic Test Structures
CityEdinburgh
Period24/03/0827/03/08

Keywords / Materials (for Non-textual outputs)

  • RESISTIVITY
  • EXTRACTION

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