An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects

H. Lin; S. Smith; Tom Stevenson; A. M. Gundlach; Camelia Dunare; Anthony Walton

An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects

H. Lin, S. Smith, Tom Stevenson, A. M. Gundlach, Camelia Dunare, Anthony Walton

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

This paper evaluates test structures designed to characterise electrical contacts between interconnect on bonded wafers. Both simulation and experimental measurements are used to explore the capability of a stacked Greek cross type test structure to extract the contact resistivity (p.) between two bonded conductive layers. It is concluded from the simulations and actual electrical measurements of the benchmark Kelvin structures that the stacked Greek cross can only be used where there is a relatively high specific contact resistivity. For the structures evaluated in this study, this was found to be greater than p(c) >= 9.0 x 10(-7) Omega center dot cm(2).

Original language	English
Title of host publication	2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers
Pages	123-127
Number of pages	5
ISBN (Print)	978-1-4244-1800-8
Publication status	Published - 2008
Event	IEEE International Conference on Microelectronic Test Structures - Edinburgh Duration: 24 Mar 2008 → 27 Mar 2008

Conference

Conference	IEEE International Conference on Microelectronic Test Structures
City	Edinburgh
Period	24/03/08 → 27/03/08

Keywords / Materials (for Non-textual outputs)

RESISTIVITY
EXTRACTION

IEEE International Conference on Microelectronic Test Structures
Stewart Smith (Chair)
24 Mar 2008 → 27 Mar 2008
Activity: Participating in or organising an event types › Participation in conference

Cite this

@inproceedings{74c0157d1bb145c298d5cdc94be06a4d,

title = "An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects",

abstract = "This paper evaluates test structures designed to characterise electrical contacts between interconnect on bonded wafers. Both simulation and experimental measurements are used to explore the capability of a stacked Greek cross type test structure to extract the contact resistivity (p.) between two bonded conductive layers. It is concluded from the simulations and actual electrical measurements of the benchmark Kelvin structures that the stacked Greek cross can only be used where there is a relatively high specific contact resistivity. For the structures evaluated in this study, this was found to be greater than p(c) >= 9.0 x 10(-7) Omega center dot cm(2).",

keywords = "RESISTIVITY, EXTRACTION",

author = "H. Lin and S. Smith and Tom Stevenson and Gundlach, {A. M.} and Camelia Dunare and Anthony Walton",

year = "2008",

language = "English",

isbn = "978-1-4244-1800-8",

pages = "123--127",

booktitle = "2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "IEEE International Conference on Microelectronic Test Structures ; Conference date: 24-03-2008 Through 27-03-2008",

}

Lin, H, Smith, S, Stevenson, T, Gundlach, AM, Dunare, C & Walton, A 2008, An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects. in 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. Institute of Electrical and Electronics Engineers, NEW YORK, pp. 123-127, IEEE International Conference on Microelectronic Test Structures, Edinburgh, 24/03/08.

An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects. / Lin, H.; Smith, S.; Stevenson, Tom et al.
2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS. NEW YORK: Institute of Electrical and Electronics Engineers, 2008. p. 123-127.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects

AU - Lin, H.

AU - Smith, S.

AU - Stevenson, Tom

AU - Gundlach, A. M.

AU - Dunare, Camelia

AU - Walton, Anthony

PY - 2008

Y1 - 2008

N2 - This paper evaluates test structures designed to characterise electrical contacts between interconnect on bonded wafers. Both simulation and experimental measurements are used to explore the capability of a stacked Greek cross type test structure to extract the contact resistivity (p.) between two bonded conductive layers. It is concluded from the simulations and actual electrical measurements of the benchmark Kelvin structures that the stacked Greek cross can only be used where there is a relatively high specific contact resistivity. For the structures evaluated in this study, this was found to be greater than p(c) >= 9.0 x 10(-7) Omega center dot cm(2).

AB - This paper evaluates test structures designed to characterise electrical contacts between interconnect on bonded wafers. Both simulation and experimental measurements are used to explore the capability of a stacked Greek cross type test structure to extract the contact resistivity (p.) between two bonded conductive layers. It is concluded from the simulations and actual electrical measurements of the benchmark Kelvin structures that the stacked Greek cross can only be used where there is a relatively high specific contact resistivity. For the structures evaluated in this study, this was found to be greater than p(c) >= 9.0 x 10(-7) Omega center dot cm(2).

KW - RESISTIVITY

KW - EXTRACTION

M3 - Conference contribution

SN - 978-1-4244-1800-8

SP - 123

EP - 127

BT - 2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS

PB - Institute of Electrical and Electronics Engineers

CY - NEW YORK

T2 - IEEE International Conference on Microelectronic Test Structures

Y2 - 24 March 2008 through 27 March 2008

ER -

An evaluation of test structures for measuring the contact resistance of 3-D bonded interconnects

Abstract / Description of output

Conference

Keywords / Materials (for Non-textual outputs)

Fingerprint

Activities

IEEE International Conference on Microelectronic Test Structures

Cite this