Abstract / Description of output
Research on memory devices is a highly active field, and many new technologies are being constantly developed. However, characterizing them and understanding how to bias for optimal performance are becoming an increasingly tight bottleneck. Here, we propose a novel technique for extracting biasing parameters, conducive to desirable switching behavior in a highly automated manner, thereby shortening the process development cycles. The principle of operation is based on: 1) applying variable amplitude, pulse-mode stimulation on a test device in order to induce switching multiple times; 2) collecting the data on how pulsing parameters affect the device's resistive state; and 3) choosing the most suitable biasing parameters for the application at hand. The utility of the proposed technique is validated on TiOx-based prototypes, where we demonstrate the successful extraction of biasing parameters that allow the operation of our devices both as multistate and binary resistive switches.
Original language | English |
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Article number | 7277063 |
Pages (from-to) | 3685-3691 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2015 |
Keywords / Materials (for Non-textual outputs)
- Characterization
- memristor
- resistive random access memory (RRAM)
- testing.