An RRAM Biasing Parameter Optimizer

Alexander Serb*, Ali Khiat, Themistoklis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

Research on memory devices is a highly active field, and many new technologies are being constantly developed. However, characterizing them and understanding how to bias for optimal performance are becoming an increasingly tight bottleneck. Here, we propose a novel technique for extracting biasing parameters, conducive to desirable switching behavior in a highly automated manner, thereby shortening the process development cycles. The principle of operation is based on: 1) applying variable amplitude, pulse-mode stimulation on a test device in order to induce switching multiple times; 2) collecting the data on how pulsing parameters affect the device's resistive state; and 3) choosing the most suitable biasing parameters for the application at hand. The utility of the proposed technique is validated on TiOx-based prototypes, where we demonstrate the successful extraction of biasing parameters that allow the operation of our devices both as multistate and binary resistive switches.

Original languageEnglish
Article number7277063
Pages (from-to)3685-3691
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number11
DOIs
Publication statusPublished - 1 Nov 2015

Keywords / Materials (for Non-textual outputs)

  • Characterization
  • memristor
  • resistive random access memory (RRAM)
  • testing.

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