Analysis of current flow in mono-crystalline electrical linewidth structures

Stewart Smith, Iain Lindsay, Anthony Walton, M W Cresswell, L W Lindholm, R A Allen, M Fallon, A M Gundlach

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on < 110 > Creek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.

Original languageEnglish
Title of host publicationICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages712
Number of pages6
ISBN (Print)0-7803-5270-X
Publication statusPublished - 1999
EventInternational Conference on Microelectronic Test Structures - GOTHENBURG
Duration: 15 Mar 199918 Mar 1999

Conference

ConferenceInternational Conference on Microelectronic Test Structures
CityGOTHENBURG
Period15/03/9918/03/99

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