Analysis of current flow in mono-crystalline electrical linewidth structures

Stewart Smith; Iain Lindsay; Anthony Walton; M W  Cresswell; L W  Lindholm; R A  Allen; M  Fallon; A M  Gundlach

Analysis of current flow in mono-crystalline electrical linewidth structures

Stewart Smith, Iain Lindsay, Anthony Walton, M W Cresswell, L W Lindholm, R A Allen, M Fallon, A M Gundlach

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on < 110 > Creek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.

Original language	English
Title of host publication	ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers
Pages	712
Number of pages	6
ISBN (Print)	0-7803-5270-X
Publication status	Published - 1999
Event	International Conference on Microelectronic Test Structures - GOTHENBURG Duration: 15 Mar 1999 → 18 Mar 1999

Conference

Conference	International Conference on Microelectronic Test Structures
City	GOTHENBURG
Period	15/03/99 → 18/03/99

Cite this

@inproceedings{79b6d0bafbdd4833952c9c859e8af1c5,

title = "Analysis of current flow in mono-crystalline electrical linewidth structures",

abstract = "The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on < 110 > Creek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.",

author = "Stewart Smith and Iain Lindsay and Anthony Walton and Cresswell, {M W} and Lindholm, {L W} and Allen, {R A} and M Fallon and Gundlach, {A M}",

year = "1999",

language = "English",

isbn = "0-7803-5270-X",

pages = "712",

booktitle = "ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "International Conference on Microelectronic Test Structures ; Conference date: 15-03-1999 Through 18-03-1999",

}

Smith, S, Lindsay, I, Walton, A, Cresswell, MW, Lindholm, LW, Allen, RA, Fallon, M & Gundlach, AM 1999, Analysis of current flow in mono-crystalline electrical linewidth structures. in ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES. Institute of Electrical and Electronics Engineers, NEW YORK, pp. 712, International Conference on Microelectronic Test Structures, GOTHENBURG, 15/03/99.

Analysis of current flow in mono-crystalline electrical linewidth structures. / Smith, Stewart; Lindsay, Iain; Walton, Anthony et al.
ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES. NEW YORK: Institute of Electrical and Electronics Engineers, 1999. p. 712.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Analysis of current flow in mono-crystalline electrical linewidth structures

AU - Smith, Stewart

AU - Lindsay, Iain

AU - Walton, Anthony

AU - Cresswell, M W

AU - Lindholm, L W

AU - Allen, R A

AU - Fallon, M

AU - Gundlach, A M

PY - 1999

Y1 - 1999

N2 - The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on < 110 > Creek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.

AB - The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on < 110 > Creek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.

M3 - Conference contribution

SN - 0-7803-5270-X

SP - 712

BT - ICMTS 1999: PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES

PB - Institute of Electrical and Electronics Engineers

CY - NEW YORK

T2 - International Conference on Microelectronic Test Structures

Y2 - 15 March 1999 through 18 March 1999

ER -

Analysis of current flow in mono-crystalline electrical linewidth structures

Abstract

Conference

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