Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors

Young Gyu You, Dong Ho Shin, Jong Hwa Ryu, E E B Campbell, Hyun-jong Chung, Sung Ho Jhang

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)505702
JournalNanotechnology
Volume32
Issue number50
Early online date21 Sep 2021
DOIs
Publication statusE-pub ahead of print - 21 Sep 2021

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