Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors

Atomic layer deposited Al₂O₃ passivation layer for few-layer WS₂ field effect transistors

Young Gyu You, Dong Ho Shin, Jong Hwa Ryu, E E B Campbell, Hyun-jong Chung, Sung Ho Jhang

Research output: Contribution to journal › Article › peer-review

@article{4d23165795084db78a5723c13e722b82,

title = "Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors",

author = "You, {Young Gyu} and Shin, {Dong Ho} and Ryu, {Jong Hwa} and Campbell, {E E B} and Hyun-jong Chung and Jhang, {Sung Ho}",

year = "2021",

month = sep,

day = "21",

doi = "10.1088/1361-6528/ac2390",

language = "English",

volume = "32",

pages = "505702",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "50",

}

TY - JOUR

T1 - Atomic layer deposited Al2O3 passivation layer for few-layer WS2 field effect transistors

AU - You, Young Gyu

AU - Shin, Dong Ho

AU - Ryu, Jong Hwa

AU - Campbell, E E B

AU - Chung, Hyun-jong

AU - Jhang, Sung Ho

PY - 2021/9/21

Y1 - 2021/9/21

U2 - 10.1088/1361-6528/ac2390

DO - 10.1088/1361-6528/ac2390

M3 - Article

SN - 0957-4484

VL - 32

SP - 505702

JO - Nanotechnology

JF - Nanotechnology

IS - 50

ER -