Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75μm pixels and dual in-pixel storage nodes

Laurence Stark; J. M. Raynor; Frederic Lalanne; Robert Henderson

Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75μm pixels and dual in-pixel storage nodes

Laurence Stark, J. M. Raynor, Frederic Lalanne, Robert Henderson

School of Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract / Description of output

A 1024x800 image sensor with voltage-domain global shutter
pixels and dual in-pixel storage is implemented in a
90nm/65nm back-illuminated (BSI) imaging process. The
pixel has a 3.75μm pitch, achieves -80dB PLS operating in its
correlated double sampling mode and has a maximum
dynamic range in its high-dynamic range imaging mode of
102dB.

Original language	English
Number of pages	2
Publication status	Published - 11 Jun 2016
Event	2016 VLSI Technology Symposium - Hawaii, Honolulu, United States Duration: 13 Jun 2016 → 17 Jun 2016

Conference

Conference	2016 VLSI Technology Symposium
Country/Territory	United States
City	Honolulu
Period	13/06/16 → 17/06/16

Access to Document

StarkVLSISymposium2016SubmittedAccepted author manuscript, 1.25 MB

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration
Henderson, R.
UK industry, commerce and public corporations
1/01/11 → 29/02/20
Project: Research

Cite this

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title = "Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75μm pixels and dual in-pixel storage nodes",

abstract = "A 1024x800 image sensor with voltage-domain global shutterpixels and dual in-pixel storage is implemented in a90nm/65nm back-illuminated (BSI) imaging process. Thepixel has a 3.75μm pitch, achieves -80dB PLS operating in itscorrelated double sampling mode and has a maximumdynamic range in its high-dynamic range imaging mode of102dB.",

author = "Laurence Stark and Raynor, {J. M.} and Frederic Lalanne and Robert Henderson",

year = "2016",

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day = "11",

language = "English",

note = "2016 VLSI Technology Symposium ; Conference date: 13-06-2016 Through 17-06-2016",

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T1 - Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75μm pixels and dual in-pixel storage nodes

AU - Stark, Laurence

AU - Raynor, J. M.

AU - Lalanne, Frederic

AU - Henderson, Robert

PY - 2016/6/11

Y1 - 2016/6/11

N2 - A 1024x800 image sensor with voltage-domain global shutterpixels and dual in-pixel storage is implemented in a90nm/65nm back-illuminated (BSI) imaging process. Thepixel has a 3.75μm pitch, achieves -80dB PLS operating in itscorrelated double sampling mode and has a maximumdynamic range in its high-dynamic range imaging mode of102dB.

AB - A 1024x800 image sensor with voltage-domain global shutterpixels and dual in-pixel storage is implemented in a90nm/65nm back-illuminated (BSI) imaging process. Thepixel has a 3.75μm pitch, achieves -80dB PLS operating in itscorrelated double sampling mode and has a maximumdynamic range in its high-dynamic range imaging mode of102dB.

M3 - Paper

T2 - 2016 VLSI Technology Symposium

Y2 - 13 June 2016 through 17 June 2016

ER -

Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75μm pixels and dual in-pixel storage nodes

Abstract / Description of output

Conference

Access to Document

Fingerprint

Projects

PhD Student Support- as part of the UoE/STMicroelectronic Research Collaboration

Cite this