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Abstract / Description of output
We present the first 3D-stacked backside illuminated (BSI) single photon avalanche diode (SPAD) image sensor capable of both single photon counting (SPC) intensity, and time resolved imaging. The 128×120 prototype has a pixel pitch of 7.83 μm making it the smallest pixel reported for SPAD image sensors. A low power, high density 40nm bottom tier hosts the quenching front end and processing electronics while an imaging specific 65nm top tier hosts the photo-detectors with a 1-to-1 hybrid bond connection . The SPAD exhibits a median dark count rate (DCR) below 200cps at room temperature and 1V excess bias, and has a peak photon detection probability (PDP) of 27.5% at 640nm and 3 V excess bias.
|Number of pages||4|
|Publication status||Published - 3 Dec 2016|
|Event||International Electron Devices Meeting - San Francisco, United States|
Duration: 3 Dec 2016 → 6 Dec 2016
|Conference||International Electron Devices Meeting|
|Period||3/12/16 → 6/12/16|
FingerprintDive into the research topics of 'Backside illuminated SPAD image sensor with 7.83μm pitch in 3D-stacked CMOS technology'. Together they form a unique fingerprint.
- 2 Finished
1/10/13 → 31/03/19
1/01/11 → 29/02/20