@inproceedings{e60622b3cf804422b8595a3e9f79e79a,
title = "Benchmarking Analogue Performance of Emerging Random Access Memory Technologies",
abstract = "In this work we present an evaluation routine aimed towards assessing the multibit capability of Resistive Random Access Memory (RRAM) technologies. We illustrate a characterization methodology for the maximum possible exploitation of the resistive states of a RRAM cell. Our characterization routine consists of a three phase algorithm: during the first it infers the polarity needed to induce a change in the device's conductance; the second stabilizes the resistive states of the device into a baseline resistance and during the third a sequence of pulses of increasing amplitude is used to determine the actual resistive states. This technology-agnostic methodology allows for efficient and high resolution partitioning of the cell's resistive operating range allowing them to operate in a truly analogue fashion. Demonstrating the maximum potential of RRAM cells in terms of closely packed resistive states can open new avenues for research in non-volatile memories, reconfigurable electronics and neuromorphic applications.",
keywords = "analogue memory, characterization, memristors, multibit memory, non-volatile, RRAM",
author = "Spyros Stathopoulos and Ali Khiat and Alexantrou Serb and Themis Prodromakis",
note = "Proxy DOA to exlude from REF OA Assessment; 2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 ; Conference date: 27-05-2018 Through 30-05-2018",
year = "2018",
month = may,
day = "4",
doi = "10.1109/ISCAS.2018.8351793",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers",
booktitle = "2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings",
address = "United States",
}