Benchmarking Analogue Performance of Emerging Random Access Memory Technologies

Spyros Stathopoulos, Ali Khiat, Alexantrou Serb, Themis Prodromakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract / Description of output

In this work we present an evaluation routine aimed towards assessing the multibit capability of Resistive Random Access Memory (RRAM) technologies. We illustrate a characterization methodology for the maximum possible exploitation of the resistive states of a RRAM cell. Our characterization routine consists of a three phase algorithm: during the first it infers the polarity needed to induce a change in the device's conductance; the second stabilizes the resistive states of the device into a baseline resistance and during the third a sequence of pulses of increasing amplitude is used to determine the actual resistive states. This technology-agnostic methodology allows for efficient and high resolution partitioning of the cell's resistive operating range allowing them to operate in a truly analogue fashion. Demonstrating the maximum potential of RRAM cells in terms of closely packed resistive states can open new avenues for research in non-volatile memories, reconfigurable electronics and neuromorphic applications.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Electronic)9781538648810
DOIs
Publication statusPublished - 4 May 2018
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy
Duration: 27 May 201830 May 2018

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2018-May
ISSN (Print)0271-4310

Conference

Conference2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Country/TerritoryItaly
CityFlorence
Period27/05/1830/05/18

Keywords / Materials (for Non-textual outputs)

  • analogue memory
  • characterization
  • memristors
  • multibit memory
  • non-volatile
  • RRAM

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