Bidirectional Volatile Signatures of Metal-Oxide Memristors-Part I: Characterization

Christos Giotis*, Alex Serb, Spyros Stathopoulos, Loukas Michalas, Ali Khiat, Themis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

The multistate capabilities as well as the intrinsic integrating properties of memristors deem them suitable candidates for the realization of novel neuromorphic applications. To date, much of their prestige arises mostly from the versatility that is promised by the nonvolatile device families. However, memristors also exhibit volatile characteristics, which for as long as they remain unknown, will hinder their integration to large-scale applications. In this article, we present a comprehensive study for characterizing the relaxation dynamics of TiOx resistive RAM (RRAM) devices within a predefined volatility framework. These dynamics are tightly linked to the total energy of stimulation, and device relaxation can be accurately described using simple mathematical models. Moreover, we show that RRAM volatility is bidirectional and that relaxation time constants heavily depend on the level of invasiveness caused by programming stimulation. Our work further includes a demonstration of how volatility can be characterized within a specific time window. Moreover, our protocol can be altered to fit the specific needs of potential applications. We anticipate that the universality of our method can act as a stepping stone toward the understanding and modeling of volatile memristors across different technologies and materials, enabling the realization of a new family of time-related applications.

Original languageEnglish
Article number9198108
Pages (from-to)5158-5165
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number11
Early online date15 Sept 2020
Publication statusPublished - Nov 2020

Keywords / Materials (for Non-textual outputs)

  • Characterization
  • memristors
  • resistive RAM (RRAM)
  • volatility


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