Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization

J M M  dos Santos; A B  Horsfall; J C P  Pina; N G  Wright; A G  O'Neill; K  Wang; S M  Soare; S J  Bull; J G  Terry; A J  Walton; A M  Gundlach; J T M  Stevenson

doi:10.1109/RELPHY.2004.1315333

Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization

J M M dos Santos, A B Horsfall, J C P Pina, N G Wright, A G O'Neill, K Wang, S M Soare, S J Bull, J G Terry, A J Walton, A M Gundlach, J T M Stevenson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have shown that the in-plane stress in aluminium metallisation can be observed using a rotating beam sensor structure. This shows that the extrinsic stress from the mismatch in expansion coefficient between the aluminium and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150degreesC reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution x-ray diffraction measurements and these show that the sensor has a resolution better than 2.8MPa.

Original language	English
Title of host publication	2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings
Place of Publication	NEW YORK
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	255-258
Number of pages	4
ISBN (Print)	0-7803-8315-X
DOIs	https://doi.org/10.1109/RELPHY.2004.1315333
Publication status	Published - 2004
Event	42nd Annual IEEE International Reliability Physics Symposium - Phoenix Duration: 25 Apr 2004 → 29 Apr 2004

Conference

Conference	42nd Annual IEEE International Reliability Physics Symposium
City	Phoenix
Period	25/04/04 → 29/04/04

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10.1109/RELPHY.2004.1315333

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dos Santos, J. M. M., Horsfall, A. B., Pina, J. C. P., Wright, N. G., O'Neill, A. G., Wang, K., Soare, S. M., Bull, S. J., Terry, J. G., Walton, A. J., Gundlach, A. M., & Stevenson, J. T. M. (2004). Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization. In 2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings (pp. 255-258). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/RELPHY.2004.1315333

@inproceedings{3c3b516a2c4746aa92ebce2244d62efe,

title = "Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization",

abstract = "We have shown that the in-plane stress in aluminium metallisation can be observed using a rotating beam sensor structure. This shows that the extrinsic stress from the mismatch in expansion coefficient between the aluminium and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150degreesC reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution x-ray diffraction measurements and these show that the sensor has a resolution better than 2.8MPa.",

author = "{dos Santos}, {J M M} and Horsfall, {A B} and Pina, {J C P} and Wright, {N G} and O'Neill, {A G} and K Wang and Soare, {S M} and Bull, {S J} and Terry, {J G} and Walton, {A J} and Gundlach, {A M} and Stevenson, {J T M}",

year = "2004",

doi = "10.1109/RELPHY.2004.1315333",

language = "English",

isbn = "0-7803-8315-X",

pages = "255--258",

booktitle = "2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "42nd Annual IEEE International Reliability Physics Symposium ; Conference date: 25-04-2004 Through 29-04-2004",

}

dos Santos, JMM, Horsfall, AB, Pina, JCP, Wright, NG, O'Neill, AG, Wang, K, Soare, SM, Bull, SJ, Terry, JG, Walton, AJ, Gundlach, AM & Stevenson, JTM 2004, Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization. in 2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings. Institute of Electrical and Electronics Engineers (IEEE), NEW YORK, pp. 255-258, 42nd Annual IEEE International Reliability Physics Symposium, Phoenix, 25/04/04. https://doi.org/10.1109/RELPHY.2004.1315333

Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization. / dos Santos, J M M ; Horsfall, A B ; Pina, J C P et al.

2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings. NEW YORK : Institute of Electrical and Electronics Engineers (IEEE), 2004. p. 255-258.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization

AU - dos Santos, J M M

AU - Horsfall, A B

AU - Pina, J C P

AU - Wright, N G

AU - O'Neill, A G

AU - Wang, K

AU - Soare, S M

AU - Bull, S J

AU - Terry, J G

AU - Walton, A J

AU - Gundlach, A M

AU - Stevenson, J T M

PY - 2004

Y1 - 2004

N2 - We have shown that the in-plane stress in aluminium metallisation can be observed using a rotating beam sensor structure. This shows that the extrinsic stress from the mismatch in expansion coefficient between the aluminium and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150degreesC reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution x-ray diffraction measurements and these show that the sensor has a resolution better than 2.8MPa.

AB - We have shown that the in-plane stress in aluminium metallisation can be observed using a rotating beam sensor structure. This shows that the extrinsic stress from the mismatch in expansion coefficient between the aluminium and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150degreesC reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution x-ray diffraction measurements and these show that the sensor has a resolution better than 2.8MPa.

U2 - 10.1109/RELPHY.2004.1315333

DO - 10.1109/RELPHY.2004.1315333

M3 - Conference contribution

SN - 0-7803-8315-X

SP - 255

EP - 258

BT - 2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - NEW YORK

T2 - 42nd Annual IEEE International Reliability Physics Symposium

Y2 - 25 April 2004 through 29 April 2004

ER -

dos Santos JMM, Horsfall AB, Pina JCP, Wright NG, O'Neill AG, Wang K et al. Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization. In 2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings. NEW YORK: Institute of Electrical and Electronics Engineers (IEEE). 2004. p. 255-258 doi: 10.1109/RELPHY.2004.1315333

Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization

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