Calibration and optimization of interconnect based MEMS test structures for predicting thermo-mechanical stress in metallization

J M M dos Santos, A B Horsfall, J C P Pina, N G Wright, A G O'Neill, K Wang, S M Soare, S J Bull, J G Terry, A J Walton, A M Gundlach, J T M Stevenson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have shown that the in-plane stress in aluminium metallisation can be observed using a rotating beam sensor structure. This shows that the extrinsic stress from the mismatch in expansion coefficient between the aluminium and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150degreesC reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution x-ray diffraction measurements and these show that the sensor has a resolution better than 2.8MPa.

Original languageEnglish
Title of host publication2004. 42nd Annual. 2004 IEEE International Reliability Physics Symposium Proceedings
Place of PublicationNEW YORK
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages255-258
Number of pages4
ISBN (Print)0-7803-8315-X
DOIs
Publication statusPublished - 2004
Event42nd Annual IEEE International Reliability Physics Symposium - Phoenix
Duration: 25 Apr 200429 Apr 2004

Conference

Conference42nd Annual IEEE International Reliability Physics Symposium
CityPhoenix
Period25/04/0429/04/04

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