CD reference materials fabricated on monolithic 200 mm wafers for automated metrology tool applications

Richard A. Allen, Ronald G. Dixson, Michael W. Cresswell, William F. Guthrie, Byron J. R. Shulver, A. S. Bunting, Tom Stevenson, Anthony J. Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, prototype isolated-line, single-crystal critical dimension (CD) reference materials (SCCDRMs) with linewidths as narrow as 40 nm +/- 1.5 nm have been reported. These reference materials, designated NIST Prototype Reference Material (RM) 8111, were configured as 10 mm by 11 mm silicon test chips mounted in 200 mm carrier wafers. The RM 8111 chips were fabricated using microelectromechanical (MEMS) process techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in a sequence involving atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) metrology. This paper reports initial results on SCCDRMs fabricated on 200 nun bulk wafers; this monolithic approach would eliminate the need for carrier wafers.

Original languageEnglish
Title of host publicationFRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007
EditorsDG Seiler, AC Diebold, R McDonald, CM Garner, D Herr, RP Khosla, EM Secula
Place of PublicationMELVILLE
PublisherAmerican Institute of Physics
Pages387-391
Number of pages5
ISBN (Print)978-0-7354-0441-0
Publication statusPublished - 2007
EventInternational Conference on Frontiers of Characterization and Metrology for Nanoelectronics - Gaithersburg
Duration: 27 Mar 200729 Mar 2007

Conference

ConferenceInternational Conference on Frontiers of Characterization and Metrology for Nanoelectronics
CityGaithersburg
Period27/03/0729/03/07

Keywords

  • metrology
  • linewidth
  • critical dimension (CD)
  • reference material (RM)
  • optical critical dimension (OCD)
  • scatterometry

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