Characterization of Electronic Displays using CMOS-Compatible Single Photon Avalanche Diode Image Sensors

Hanning Mai; Istvan Gyongy; Neale Dutton; Robert Henderson; Ian Underwood

doi:10.1002/jsid.661

Characterization of Electronic Displays using CMOS-Compatible Single Photon Avalanche Diode Image Sensors

Hanning Mai^*, Istvan Gyongy, Neale Dutton, Robert Henderson, Ian Underwood

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Advanced CMOS-compatible Single Photon Avalanche Diode Array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a CMOS-compatible Single Photon Avalanche Diode Array to perform detailed optical measurements on pixels of an OLED microdisplay at very high sampling rate, very low light level and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this Single Photon Avalanche Diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of OLED pixels.

Original language	English
Pages (from-to)	255-261
Number of pages	7
Journal	Journal of the Society for Information Display
Volume	26
Issue number	4
Early online date	8 May 2018
DOIs	https://doi.org/10.1002/jsid.661
Publication status	Published - 19 Jun 2018

Keywords / Materials (for Non-textual outputs)

CMOS-SPAD
display measurement
TRANSIENT ELECTROLUMINESCENCE
TIME
PERFORMANCE
ARRAYS
BIT

Access to Document

10.1002/jsid.661

DW2018_extend_clean_origAccepted author manuscript, 1.66 MB

Cite this

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title = "Characterization of Electronic Displays using CMOS-Compatible Single Photon Avalanche Diode Image Sensors",

abstract = "Advanced CMOS-compatible Single Photon Avalanche Diode Array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a CMOS-compatible Single Photon Avalanche Diode Array to perform detailed optical measurements on pixels of an OLED microdisplay at very high sampling rate, very low light level and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this Single Photon Avalanche Diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of OLED pixels.",

keywords = "CMOS-SPAD, display measurement, TRANSIENT ELECTROLUMINESCENCE, TIME, PERFORMANCE, ARRAYS, BIT",

author = "Hanning Mai and Istvan Gyongy and Neale Dutton and Robert Henderson and Ian Underwood",

year = "2018",

month = jun,

day = "19",

doi = "10.1002/jsid.661",

language = "English",

volume = "26",

pages = "255--261",

journal = "Journal of the Society for Information Display",

issn = "1071-0922",

publisher = "Wiley-Blackwell",

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}

TY - JOUR

T1 - Characterization of Electronic Displays using CMOS-Compatible Single Photon Avalanche Diode Image Sensors

AU - Mai, Hanning

AU - Gyongy, Istvan

AU - Dutton, Neale

AU - Henderson, Robert

AU - Underwood, Ian

PY - 2018/6/19

Y1 - 2018/6/19

N2 - Advanced CMOS-compatible Single Photon Avalanche Diode Array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a CMOS-compatible Single Photon Avalanche Diode Array to perform detailed optical measurements on pixels of an OLED microdisplay at very high sampling rate, very low light level and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this Single Photon Avalanche Diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of OLED pixels.

AB - Advanced CMOS-compatible Single Photon Avalanche Diode Array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a CMOS-compatible Single Photon Avalanche Diode Array to perform detailed optical measurements on pixels of an OLED microdisplay at very high sampling rate, very low light level and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this Single Photon Avalanche Diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of OLED pixels.

KW - CMOS-SPAD

KW - display measurement

KW - TRANSIENT ELECTROLUMINESCENCE

KW - TIME

KW - PERFORMANCE

KW - ARRAYS

KW - BIT

UR - https://www.scopus.com/pages/publications/85046552087

U2 - 10.1002/jsid.661

DO - 10.1002/jsid.661

M3 - Article

SN - 1071-0922

VL - 26

SP - 255

EP - 261

JO - Journal of the Society for Information Display

JF - Journal of the Society for Information Display

IS - 4

ER -

Characterization of Electronic Displays using CMOS-Compatible Single Photon Avalanche Diode Image Sensors

Abstract

Keywords / Materials (for Non-textual outputs)

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TOTALPHOTON: A Total Photon Camera for Molecular Imaging of Live Cells

Pilot Optical Line for Imaging and Sensing (POLIS)

Ian Underwood

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Characterization of Electronic Displays using CMOS-Compatible Single Photon Avalanche Diode Image Sensors

Abstract

Keywords / Materials (for Non-textual outputs)

Access to Document

Other files and links

Fingerprint

Projects

TOTALPHOTON: A Total Photon Camera for Molecular Imaging of Live Cells

Pilot Optical Line for Imaging and Sensing (POLIS)

Profiles

Ian Underwood

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