CMOS current attenuator for electrochemical sensing applications

Chandrasekaran Gunasekaran; Ian Underwood; Anthony Walton; Andrew Mount

doi:10.1109/ICSENS.2017.8234011

CMOS current attenuator for electrochemical sensing applications

Chandrasekaran Gunasekaran, Ian Underwood, Anthony Walton, Andrew Mount

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract / Description of output

A new CMOS current attenuator circuit is designed and demonstrated. The purpose of this circuit is to attenuate steady state current in conjunction with CMOS ADC readout circuits for electrochemical sensing applications. The circuit has been fabricated in a 5 V AMS CMOS process. Salient features include: (1) bi-directional input current range from 25 nA to 300 nA; (2) current attenuation of 55 dB; (3) non-linearity around 2 % over the entire input current range; (4) output DC offset current of around 200 pA; (5) power consumption around 0.35 mW.

Original language	English
Title of host publication	IEEE Sensors 2017
Publisher	Institute of Electrical and Electronics Engineers
ISBN (Electronic)	978-1-5090-1012-7
DOIs	https://doi.org/10.1109/ICSENS.2017.8234011
Publication status	Published - 29 Oct 2017
Event	IEEE SENSORS 2017 - Scottish Event Campus , Glasgow, United Kingdom Duration: 30 Oct 2017 → 1 Nov 2017 http://ieee-sensors2017.org/

Conference

Conference	IEEE SENSORS 2017
Country/Territory	United Kingdom
City	Glasgow
Period	30/10/17 → 1/11/17
Internet address	http://ieee-sensors2017.org/

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10.1109/ICSENS.2017.8234011

CMOS Current Attenuator for Electrochemical Sensing Applications

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@inproceedings{237b1599aa2a4a56bbe2564cc2e5bf5c,

title = "CMOS current attenuator for electrochemical sensing applications",

abstract = "A new CMOS current attenuator circuit is designed and demonstrated. The purpose of this circuit is to attenuate steady state current in conjunction with CMOS ADC readout circuits for electrochemical sensing applications. The circuit has been fabricated in a 5 V AMS CMOS process. Salient features include: (1) bi-directional input current range from 25 nA to 300 nA; (2) current attenuation of 55 dB; (3) non-linearity around 2 % over the entire input current range; (4) output DC offset current of around 200 pA; (5) power consumption around 0.35 mW.",

author = "Chandrasekaran Gunasekaran and Ian Underwood and Anthony Walton and Andrew Mount",

note = "Acceptance date set to exclude from REF OA Policy ; IEEE SENSORS 2017 ; Conference date: 30-10-2017 Through 01-11-2017",

year = "2017",

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day = "29",

doi = "10.1109/ICSENS.2017.8234011",

language = "English",

booktitle = "IEEE Sensors 2017",

publisher = "Institute of Electrical and Electronics Engineers",

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TY - GEN

T1 - CMOS current attenuator for electrochemical sensing applications

AU - Gunasekaran, Chandrasekaran

AU - Underwood, Ian

AU - Walton, Anthony

AU - Mount, Andrew

N1 - Acceptance date set to exclude from REF OA Policy

PY - 2017/10/29

Y1 - 2017/10/29

N2 - A new CMOS current attenuator circuit is designed and demonstrated. The purpose of this circuit is to attenuate steady state current in conjunction with CMOS ADC readout circuits for electrochemical sensing applications. The circuit has been fabricated in a 5 V AMS CMOS process. Salient features include: (1) bi-directional input current range from 25 nA to 300 nA; (2) current attenuation of 55 dB; (3) non-linearity around 2 % over the entire input current range; (4) output DC offset current of around 200 pA; (5) power consumption around 0.35 mW.

AB - A new CMOS current attenuator circuit is designed and demonstrated. The purpose of this circuit is to attenuate steady state current in conjunction with CMOS ADC readout circuits for electrochemical sensing applications. The circuit has been fabricated in a 5 V AMS CMOS process. Salient features include: (1) bi-directional input current range from 25 nA to 300 nA; (2) current attenuation of 55 dB; (3) non-linearity around 2 % over the entire input current range; (4) output DC offset current of around 200 pA; (5) power consumption around 0.35 mW.

U2 - 10.1109/ICSENS.2017.8234011

DO - 10.1109/ICSENS.2017.8234011

M3 - Conference contribution

BT - IEEE Sensors 2017

PB - Institute of Electrical and Electronics Engineers

T2 - IEEE SENSORS 2017

Y2 - 30 October 2017 through 1 November 2017

ER -

CMOS current attenuator for electrochemical sensing applications

Abstract / Description of output

Conference

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