Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices

Iulia Salaoru, Qingjiang Li, Ali Khiat*, Themistoklis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract / Description of output

This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiOx active layer via the displacement of ionic species.

Original languageEnglish
Article number552
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
Publication statusPublished - 4 Oct 2014

Keywords / Materials (for Non-textual outputs)

  • Memcapacitor
  • Memristor
  • Nanoscale
  • ReRAM
  • TiO

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