Abstract / Description of output
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiOx active layer via the displacement of ionic species.
Original language | English |
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Article number | 552 |
Pages (from-to) | 1-7 |
Number of pages | 7 |
Journal | Nanoscale Research Letters |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 4 Oct 2014 |
Keywords / Materials (for Non-textual outputs)
- Memcapacitor
- Memristor
- Nanoscale
- ReRAM
- TiO