Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures

Lin Lui; Jun-Feng Wang; Xiao-Di Liu; Hai-An Xu; Jin-Ming Cui; Qiang Li; Ji-Yang Zhou; Wu-Xi Lin; Zhen-Xuan He; Wan Xu; Yu Wei; Zheng-Hao Liu; Pu Wang; Zhi-He Hao; Jun-Feng Ding; Hai-Ou Li; Wen Liu; Hao Li; Li-Xing You; Jin-Shi Xu; Eugene Gregoryanz; Chuan-Feng Li; Guang-Can Guo

doi:10.1021/acs.nanolett.2c03378

Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures

Lin Lui, Jun-Feng Wang, Xiao-Di Liu^*, Hai-An Xu, Jin-Ming Cui, Qiang Li, Ji-Yang Zhou, Wu-Xi Lin, Zhen-Xuan He, Wan Xu, Yu Wei, Zheng-Hao Liu, Pu Wang, Zhi-He Hao, Jun-Feng Ding, Hai-Ou Li, Wen Liu, Hao Li, Li-Xing You, Jin-Shi Xu^*Eugene Gregoryanz, Chuan-Feng Li^*, Guang-Can Guo

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Letter › peer-review

Abstract

Spin defects in silicon carbide appear to be a promising tool for various quantum
technologies, especially for quantum sensing. However, this technique has been
used only at ambient pressure. Here, by combining this technique with diamond
anvil cell, we systematically study the optical and spin properties of divacancy
defects created at the surface of SiC at pressures up to 40 GPa. The
zero-field-splitting of the divacancy spins increases linearly with pressure as a
slope of 25.1 MHz/GPa, which is almost twice times larger than that of the
nitrogen-vacancy center in diamond. The corresponding pressure sensing
sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of the divacancy
demonstrating that the coherence time decreases as pressure increases. Based on this, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.

Original language	English
Pages (from-to)	9943-9950
Number of pages	8
Journal	Nano Letters
Volume	22
Issue number	24
Early online date	12 Dec 2022
DOIs	https://doi.org/10.1021/acs.nanolett.2c03378
Publication status	Published - 28 Dec 2022

Keywords / Materials (for Non-textual outputs)

divacancy
high pressure
coherent control
magnetic detection
silicon carbide

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10.1021/acs.nanolett.2c03378

Nat_Mat_23Accepted author manuscript, 1.83 MBLicence: Creative Commons: Attribution (CC-BY)

Cite this

Lui, L., Wang, J.-F., Liu, X.-D., Xu, H.-A., Cui, J.-M., Li, Q., Zhou, J.-Y., Lin, W.-X., He, Z.-X., Xu, W., Wei, Y., Liu, Z.-H., Wang, P., Hao, Z.-H., Ding, J.-F., Li, H.-O., Liu, W., Li, H., You, L.-X., ... Guo, G.-C. (2022). Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures. Nano Letters, 22(24), 9943-9950. https://doi.org/10.1021/acs.nanolett.2c03378

@article{7ebdf9c388f143489f11a06ea131e257,

title = "Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures",

abstract = "Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure as aslope of 25.1 MHz/GPa, which is almost twice times larger than that of the nitrogen-vacancy center in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of the divacancy demonstrating that the coherence time decreases as pressure increases. Based on this, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.",

keywords = "divacancy, high pressure, coherent control, magnetic detection, silicon carbide",

author = "Lin Lui and Jun-Feng Wang and Xiao-Di Liu and Hai-An Xu and Jin-Ming Cui and Qiang Li and Ji-Yang Zhou and Wu-Xi Lin and Zhen-Xuan He and Wan Xu and Yu Wei and Zheng-Hao Liu and Pu Wang and Zhi-He Hao and Jun-Feng Ding and Hai-Ou Li and Wen Liu and Hao Li and Li-Xing You and Jin-Shi Xu and Eugene Gregoryanz and Chuan-Feng Li and Guang-Can Guo",

year = "2022",

month = dec,

day = "28",

doi = "10.1021/acs.nanolett.2c03378",

language = "English",

volume = "22",

pages = "9943--9950",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "24",

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Lui, L, Wang, J-F, Liu, X-D, Xu, H-A, Cui, J-M, Li, Q, Zhou, J-Y, Lin, W-X, He, Z-X, Xu, W, Wei, Y, Liu, Z-H, Wang, P, Hao, Z-H, Ding, J-F, Li, H-O, Liu, W, Li, H, You, L-X, Xu, J-S, Gregoryanz, E, Li, C-F & Guo, G-C 2022, 'Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures', Nano Letters, vol. 22, no. 24, pp. 9943-9950. https://doi.org/10.1021/acs.nanolett.2c03378

TY - JOUR

T1 - Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures

AU - Lui, Lin

AU - Wang, Jun-Feng

AU - Liu, Xiao-Di

AU - Xu, Hai-An

AU - Cui, Jin-Ming

AU - Li, Qiang

AU - Zhou, Ji-Yang

AU - Lin, Wu-Xi

AU - He, Zhen-Xuan

AU - Xu, Wan

AU - Wei, Yu

AU - Liu, Zheng-Hao

AU - Wang, Pu

AU - Hao, Zhi-He

AU - Ding, Jun-Feng

AU - Li, Hai-Ou

AU - Liu, Wen

AU - Li, Hao

AU - You, Li-Xing

AU - Xu, Jin-Shi

AU - Gregoryanz, Eugene

AU - Li, Chuan-Feng

AU - Guo, Guang-Can

PY - 2022/12/28

Y1 - 2022/12/28

N2 - Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure as aslope of 25.1 MHz/GPa, which is almost twice times larger than that of the nitrogen-vacancy center in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of the divacancy demonstrating that the coherence time decreases as pressure increases. Based on this, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.

AB - Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure as aslope of 25.1 MHz/GPa, which is almost twice times larger than that of the nitrogen-vacancy center in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of the divacancy demonstrating that the coherence time decreases as pressure increases. Based on this, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.

KW - divacancy

KW - high pressure

KW - coherent control

KW - magnetic detection

KW - silicon carbide

U2 - 10.1021/acs.nanolett.2c03378

DO - 10.1021/acs.nanolett.2c03378

M3 - Letter

SN - 1530-6984

VL - 22

SP - 9943

EP - 9950

JO - Nano Letters

JF - Nano Letters

IS - 24

ER -

Coherent control and magnetic detection of divacancy spins in silicon carbide at high pressures

Abstract

Keywords / Materials (for Non-textual outputs)

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