Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors-Part I: Behavioral Model

Dhirendra Vaidya; Shraddha Kothari; Thomas Abbey; Ali Khiat; Spyros Stathopoulos; Loukas Michalas; Alexantrou Serb; Themis Prodromakis

doi:10.1109/TED.2021.3101996

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors-Part I: Behavioral Model

Dhirendra Vaidya^*, Shraddha Kothari, Thomas Abbey, Ali Khiat, Spyros Stathopoulos, Loukas Michalas, Alexantrou Serb, Themis Prodromakis

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOx memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOx/Au and Pt/TiOx/Pt memristors.

Original language	English
Pages (from-to)	4877-4884
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	10
DOIs	https://doi.org/10.1109/TED.2021.3101996
Publication status	Published - 26 Aug 2021

Keywords / Materials (for Non-textual outputs)

Behavioral model
metal oxide memristors
pulsed resistance transient (PRT) measurements
resistive RAMs switching dynamics
temperature dependence
TiO memristors

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10.1109/TED.2021.3101996

https://ieeexplore.ieee.org/document/9523512Licence: Creative Commons: Attribution (CC-BY)

Cite this

@article{88212f15089545d380a9890b7604b0ae,

title = "Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors-Part I: Behavioral Model",

abstract = "Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOx memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOx/Au and Pt/TiOx/Pt memristors. ",

keywords = "Behavioral model, metal oxide memristors, pulsed resistance transient (PRT) measurements, resistive RAMs switching dynamics, temperature dependence, TiO memristors",

author = "Dhirendra Vaidya and Shraddha Kothari and Thomas Abbey and Ali Khiat and Spyros Stathopoulos and Loukas Michalas and Alexantrou Serb and Themis Prodromakis",

note = "Funding Information: Manuscript received July 12, 2021; accepted July 19, 2021. Date of publication August 26, 2021; date of current version September 22, 2021. This work was supported by FORTE, which is a UKRI Engineering and Physical Sciences Research Council Programme under Grant EP/R024642/1. The review of this article was arranged by Editor B. K. Kaushik. (Corresponding author: Dhirendra Vaidya.) The authors are with the Centre for Electronics Frontiers, University of Southampton, Southampton SO17 1BJ, U.K. (e-mail: [email protected]; [email protected]). Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

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doi = "10.1109/TED.2021.3101996",

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publisher = "Institute of Electrical and Electronics Engineers",

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T2 - Behavioral Model

AU - Vaidya, Dhirendra

AU - Kothari, Shraddha

AU - Abbey, Thomas

AU - Khiat, Ali

AU - Stathopoulos, Spyros

AU - Michalas, Loukas

AU - Serb, Alexantrou

AU - Prodromakis, Themis

N1 - Funding Information: Manuscript received July 12, 2021; accepted July 19, 2021. Date of publication August 26, 2021; date of current version September 22, 2021. This work was supported by FORTE, which is a UKRI Engineering and Physical Sciences Research Council Programme under Grant EP/R024642/1. The review of this article was arranged by Editor B. K. Kaushik. (Corresponding author: Dhirendra Vaidya.) The authors are with the Centre for Electronics Frontiers, University of Southampton, Southampton SO17 1BJ, U.K. (e-mail: [email protected]; [email protected]). Publisher Copyright: © 2021 IEEE.

PY - 2021/8/26

Y1 - 2021/8/26

N2 - Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOx memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOx/Au and Pt/TiOx/Pt memristors.

AB - Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOx memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOx/Au and Pt/TiOx/Pt memristors.

KW - Behavioral model

KW - metal oxide memristors

KW - pulsed resistance transient (PRT) measurements

KW - resistive RAMs switching dynamics

KW - temperature dependence

KW - TiO memristors

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JO - IEEE Transactions on Electron Devices

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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors-Part I: Behavioral Model

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Keywords / Materials (for Non-textual outputs)

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FORTE: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant

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Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors-Part I: Behavioral Model

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

Access to Document

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Projects

FORTE: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant

Cite this