Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO-Based Memristors-Part I: Behavioral Model

Dhirendra Vaidya*, Shraddha Kothari, Thomas Abbey, Ali Khiat, Spyros Stathopoulos, Loukas Michalas, Alexantrou Serb, Themis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOx memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOx/Au and Pt/TiOx/Pt memristors.

Original languageEnglish
Pages (from-to)4877-4884
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume68
Issue number10
DOIs
Publication statusPublished - 26 Aug 2021

Keywords

  • Behavioral model
  • metal oxide memristors
  • pulsed resistance transient (PRT) measurements
  • resistive RAMs switching dynamics
  • temperature dependence
  • TiO memristors

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