Projects per year
Abstract / Description of output
In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.
Original language | English |
---|---|
Pages (from-to) | 4885-4890 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 68 |
Issue number | 10 |
Early online date | 25 Aug 2021 |
DOIs | |
Publication status | E-pub ahead of print - 25 Aug 2021 |
Keywords / Materials (for Non-textual outputs)
- Compact model
- metal-oxide memristors
- physics-based model
- pulsed resistance transient (PRT) measurements
- resistive RAMs
- Schottky emission
- static I-V
- switching dynamics
- temperature dependence
- TiO memristors
Fingerprint
Dive into the research topics of 'Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model'. Together they form a unique fingerprint.Projects
- 1 Finished
-
FORTE: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
Prodromakis, T., Constandinou, T. G., Dudek, P., Koch, D. & Papavassiliou, C.
1/05/22 → 30/09/23
Project: Research