Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model

Dhirendra Vaidya; Shraddha Kothari; Thomas Abbey; Spyros Stathopoulos; Loukas Michalas; Alexantrou Serb; Themis Prodromakis

doi:10.1109/TED.2021.3102002

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model

Dhirendra Vaidya^*, Shraddha Kothari, Thomas Abbey, Spyros Stathopoulos, Loukas Michalas, Alexantrou Serb, Themis Prodromakis

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract / Description of output

In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.

Original language	English
Pages (from-to)	4885-4890
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	10
Early online date	25 Aug 2021
DOIs	https://doi.org/10.1109/TED.2021.3102002
Publication status	E-pub ahead of print - 25 Aug 2021

Keywords / Materials (for Non-textual outputs)

Compact model
metal-oxide memristors
physics-based model
pulsed resistance transient (PRT) measurements
resistive RAMs
Schottky emission
static I-V
switching dynamics
temperature dependence
TiO memristors

Access to Document

10.1109/TED.2021.3102002

https://ieeexplore.ieee.org/document/9522004Licence: Creative Commons: Attribution (CC-BY)

Cite this

@article{1f5fe49b37a94c4a8cbe635a2844f667,

title = "Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model",

abstract = "In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence. ",

keywords = "Compact model, metal-oxide memristors, physics-based model, pulsed resistance transient (PRT) measurements, resistive RAMs, Schottky emission, static I-V, switching dynamics, temperature dependence, TiO memristors",

author = "Dhirendra Vaidya and Shraddha Kothari and Thomas Abbey and Spyros Stathopoulos and Loukas Michalas and Alexantrou Serb and Themis Prodromakis",

note = "Funding Information: Manuscript received April 23, 2021; revised July 12, 2021; accepted July 22, 2021. Date of publication August 25, 2021; date of current version September 22, 2021. This work was supported by FORTE which is a UKRI Engineering and Physical Sciences Research Council Programme under Grant EP/R024642/1. The review of this article was arranged by Editor B. K. Kaushik. (Corresponding author: Dhirendra Vaidya.) The authors are with the Centre for Electronics Frontiers, University of Southampton, Southampton SO17 1BJ, U.K. (e-mail: [email protected]; [email protected]). Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

month = aug,

day = "25",

doi = "10.1109/TED.2021.3102002",

language = "English",

volume = "68",

pages = "4885--4890",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "10",

}

TY - JOUR

T1 - Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II

T2 - Physics-Based Model

AU - Vaidya, Dhirendra

AU - Kothari, Shraddha

AU - Abbey, Thomas

AU - Stathopoulos, Spyros

AU - Michalas, Loukas

AU - Serb, Alexantrou

AU - Prodromakis, Themis

N1 - Funding Information: Manuscript received April 23, 2021; revised July 12, 2021; accepted July 22, 2021. Date of publication August 25, 2021; date of current version September 22, 2021. This work was supported by FORTE which is a UKRI Engineering and Physical Sciences Research Council Programme under Grant EP/R024642/1. The review of this article was arranged by Editor B. K. Kaushik. (Corresponding author: Dhirendra Vaidya.) The authors are with the Centre for Electronics Frontiers, University of Southampton, Southampton SO17 1BJ, U.K. (e-mail: [email protected]; [email protected]). Publisher Copyright: © 2021 IEEE.

PY - 2021/8/25

Y1 - 2021/8/25

N2 - In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.

AB - In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiOx-based memristors, both switching and static. We show that the current-voltage (I-V) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static I-V compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static I-V model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.

KW - Compact model

KW - metal-oxide memristors

KW - physics-based model

KW - pulsed resistance transient (PRT) measurements

KW - resistive RAMs

KW - Schottky emission

KW - static I-V

KW - switching dynamics

KW - temperature dependence

KW - TiO memristors

UR - http://www.scopus.com/inward/record.url?scp=85113880681&partnerID=8YFLogxK

U2 - 10.1109/TED.2021.3102002

DO - 10.1109/TED.2021.3102002

M3 - Article

AN - SCOPUS:85113880681

SN - 0018-9383

VL - 68

SP - 4885

EP - 4890

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

Access to Document

Other files and links

Fingerprint

FORTE: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant

Cite this

Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO Memristors-Part II: Physics-Based Model

Abstract / Description of output

Keywords / Materials (for Non-textual outputs)

Access to Document

Other files and links

Fingerprint

Projects

FORTE: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant

Cite this