This paper presents a comparison of optical and electrical techniques for critical dimension (CD) metrology on binary and alternating aperture phase-shifting masks. Measurements obtained from on-mask electrical CD structures are compared with optical measurements made using a deep ultraviolet mask metrology system. The results show that the presence of alternating phase-shifting trenches between the chrome blocking features has a detrimental effect on the optical measurements and that this effect strongly depends on the depth of the trenches. In addition, the optical metrology system appears to have problems with the measurement of the narrowest isolated features due to calibration related issues. Electrical CD measurements are seen as a way of probing the limits of optical tool calibration and for highlighting and managing the need to extend the complexity of the calibration schedule.
|Number of pages||7|
|Journal||IEEE Transactions on Semiconductor Manufacturing|
|Publication status||Published - 1 May 2008|
- Advanced lithography
- alternating aperture phase-shifting masks
- critical dimension (CD)
- test structures