Comparison of Optical and Electrical Techniques for Dimensional Metrology on Alternating Aperture Phase-Shifting Masks

Stewart Smith, Andreas Tsiamis, M. McCallum, A. C. Hourd, Tom Stevenson, Anthony Walton

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents a comparison of optical and electrical techniques for critical dimension (CD) metrology on binary and alternating aperture phase-shifting masks. Measurements obtained from on-mask electrical CD structures are compared with optical measurements made using a deep ultraviolet mask metrology system. The results show that the presence of alternating phase-shifting trenches between the chrome blocking features has a detrimental effect on the optical measurements and that this effect strongly depends on the depth of the trenches. In addition, the optical metrology system appears to have problems with the measurement of the narrowest isolated features due to calibration related issues. Electrical CD measurements are seen as a way of probing the limits of optical tool calibration and for highlighting and managing the need to extend the complexity of the calibration schedule.
Original languageEnglish
Pages (from-to)154-160
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume21
Issue number2
DOIs
Publication statusPublished - 1 May 2008

Keywords

  • Advanced lithography
  • alternating aperture phase-shifting masks
  • critical dimension (CD)
  • linewidth
  • metrology
  • test structures

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