Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

R. K. Henderson; B. R. Rae; D. U. Li

doi:10.1533/9780857097521.2.312

Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

R. K. Henderson^*, B. R. Rae, D. U. Li

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.

Original language	English
Title of host publication	High Performance Silicon Imaging
Subtitle of host publication	Fundamentals and Applications of CMOS and CCD sensors
Publisher	Elsevier
Pages	312-347
Number of pages	36
ISBN (Electronic)	9780857097521
ISBN (Print)	9780857095985
DOIs	https://doi.org/10.1533/9780857097521.2.312
Publication status	Published - 14 May 2014

Keywords / Materials (for Non-textual outputs)

Charge coupled device
CMOS image sensor
Fluorescence lifetime imaging
Single photon avalanche diode
Time-correlated single photon counting

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10.1533/9780857097521.2.312

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abstract = "This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.",

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AU - Rae, B. R.

AU - Li, D. U.

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AB - This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.

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KW - CMOS image sensor

KW - Fluorescence lifetime imaging

KW - Single photon avalanche diode

KW - Time-correlated single photon counting

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ER -

Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

Abstract

Keywords / Materials (for Non-textual outputs)

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