Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.

Original languageEnglish
Title of host publicationHigh Performance Silicon Imaging
Subtitle of host publicationFundamentals and Applications of CMOS and CCD sensors
PublisherElsevier Inc.
Pages312-347
Number of pages36
ISBN (Electronic)9780857097521
ISBN (Print)9780857095985
DOIs
Publication statusPublished - 14 May 2014

Keywords

  • Charge coupled device
  • CMOS image sensor
  • Fluorescence lifetime imaging
  • Single photon avalanche diode
  • Time-correlated single photon counting

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