Complementary metal-oxide-semiconductor (CMOS) sensors for fluorescence lifetime imaging (FLIM)

R. K. Henderson*, B. R. Rae, D. U. Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter


This chapter begins by reviewing the theory, techniques and applications of fluorescence lifetime sensing. It then looks at existing instrumentation and the ways in which complementary metal-oxide-semiconductor (CMOS) technology has sought to complement these technologies by providing low cost, robust and miniaturised sensors with increased throughput and dynamic range. A number of pixels and sensor architectures are compared with a view to future fully-integrated, lifetime imaging systems based on CMOS sensors.

Original languageEnglish
Title of host publicationHigh Performance Silicon Imaging
Subtitle of host publicationFundamentals and Applications of CMOS and CCD sensors
PublisherElsevier Inc.
Number of pages36
ISBN (Electronic)9780857097521
ISBN (Print)9780857095985
Publication statusPublished - 14 May 2014


  • Charge coupled device
  • CMOS image sensor
  • Fluorescence lifetime imaging
  • Single photon avalanche diode
  • Time-correlated single photon counting


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