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Abstract / Description of output
This article investigates the design and control of the parallel-hybrid converter (PHC), which consists of parallel connection of a silicon insulated gate bipolar transistor (IGBT) bridge and a partially rated silicon carbide (SiC) mosfets bridge with a shared dc bus. The IGBT bridge processes the bulk of the power, while switching at a low frequency to maximize efficiency, while the SiC mosfets bridge's lower relative switching loss is exploited to filter low-order harmonics from the IGBT bridge. A finite-set model predictive controller is detailed that allows IGBT switching frequencies down to 1 kHz to be achieved while also tightly controlling the magnitude of current in the SiC bridge. A genetic algorithm is utilized to automatically tune the control and investigate the design of the output filter as well as the influence of the controller time-step and horizon length on the performance. Power loss estimates of a 1.5 MW application case are made showing potential for significant power-loss reductions. Experimental tests validate an field-programmable gate array (FPGA) implementation of the controller and topologies performance, with IGBT bridge frequencies below 1.2 kHz and grid-current total harmonic distortion below 3% achieved. The ability of converter to switch operation between a high-current and a low-current mode and dynamic performance is also verified.
Original language | English |
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Article number | 10285468 |
Pages (from-to) | 799-813 |
Number of pages | 15 |
Journal | IEEE Transactions on Power Electronics |
Volume | 39 |
Issue number | 1 |
Early online date | 13 Oct 2023 |
DOIs | |
Publication status | Published - 1 Jan 2024 |
Keywords / Materials (for Non-textual outputs)
- Bridge circuits
- Silicon carbide
- Insulated gate bipolar transistors
- Silicon
- MOSFET
- Topology
- Power harmonic filters
- depth-first search (DFS)
- model predictive control
- partial load efficiency
- power electronic converter
- field-programmable gate array
- Active filtering
- silicon carbide (SiC) mosfets
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Dive into the research topics of 'Converter Topology for Megawatt Scale Applications with Reduced Filtering Requirements, formed of IGBT Bridge operating in the 1000 Hz Region with Parallel Part-Rated High-Frequency SiC MOSFET Bridge'. Together they form a unique fingerprint.Projects
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Unlocking the Potential of High Current Silicon Carbide MOSFETS in Multi-Megawatt Wind-Turbine Converters
1/01/22 → 31/12/25
Project: Research