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Core Fluorination Enhances Solubility and Ambient Stability of an IDT-Based n-Type Semiconductor in Transistor Devices

  • T. Hodsden
  • , K.J. Thorley
  • , J. Panidi
  • , A. Basu
  • , A.V. Marsh
  • , H. Dai
  • , A.J.P. White
  • , C. Wang
  • , W. Mitchell
  • , F. Glöcklhofer
  • , T.D. Anthopoulos
  • , M. Heeney

Research output: Contribution to journal › Article › peer-review

Abstract

The synthesis of a novel fluorinated n-type small molecule based on an indacenodithiophene core is reported. Fluorination is found to have a significant impact on the physical properties, including a surprisingly dramatic improvement in solubility, in addition to effectively stabilizing the lowest-unoccupied molecular orbital energy (−4.24 eV). Single-crystal analysis and density functional theory calculations indicate the improved solubility can be attributed to backbone torsion resulting from the positioning of the fluorine group in close proximity to the strongly electron-withdrawing dicyanomethylene group. Organic thin-film transistors made via blade coating display high electron mobility (up to 0.49 cm2 V−1 s−1) along with good retention of performance in ambient conditions.
Original languageUndefined/Unknown
Article number2000325
JournalAdvanced Functional Materials
Volume30
Issue number17
Early online date26 Feb 2020
DOIs
Publication statusPublished - 27 Apr 2020

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