TY - JOUR
T1 - Correlated resistive/capacitive state variability in solid TiO2 based memory devices
AU - Li, Qingjiang
AU - Salaoru, Iulia
AU - Khiat, Ali
AU - Xu, Hui
AU - Prodromakis, Themistoklis
N1 - Funding Information:
We acknowledge the financial support of the National Nature Science Foundation (61604177, 61471377), NUDT Science Support Program (JC-15-04-02), and EPSRC (EP/K017829/1).
Publisher Copyright:
© 2017, Springer-Verlag Berlin Heidelberg.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.
AB - In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.
UR - http://www.scopus.com/inward/record.url?scp=85018723297&partnerID=8YFLogxK
U2 - 10.1007/s00339-017-0991-5
DO - 10.1007/s00339-017-0991-5
M3 - Article
AN - SCOPUS:85018723297
SN - 0947-8396
VL - 123
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 5
M1 - 372
ER -