Correlated resistive/capacitive state variability in solid TiO2 based memory devices

Qingjiang Li*, Iulia Salaoru, Ali Khiat, Hui Xu, Themistoklis Prodromakis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

Original languageEnglish
Article number372
JournalApplied Physics A: Materials Science and Processing
Volume123
Issue number5
Early online date25 Apr 2017
DOIs
Publication statusPublished - 1 May 2017

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