Correlated resistive/capacitive state variability in solid TiO2 based memory devices

Qingjiang Li; Iulia Salaoru; Ali Khiat; Hui Xu; Themistoklis Prodromakis

doi:10.1007/s00339-017-0991-5

Correlated resistive/capacitive state variability in solid TiO₂ based memory devices

Qingjiang Li^*, Iulia Salaoru, Ali Khiat, Hui Xu, Themistoklis Prodromakis

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO₂ based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

Original language	English
Article number	372
Journal	Applied Physics A: Materials Science and Processing
Volume	123
Issue number	5
Early online date	25 Apr 2017
DOIs	https://doi.org/10.1007/s00339-017-0991-5
Publication status	Published - 1 May 2017

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title = "Correlated resistive/capacitive state variability in solid TiO2 based memory devices",

abstract = "In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.",

author = "Qingjiang Li and Iulia Salaoru and Ali Khiat and Hui Xu and Themistoklis Prodromakis",

note = "Funding Information: We acknowledge the financial support of the National Nature Science Foundation (61604177, 61471377), NUDT Science Support Program (JC-15-04-02), and EPSRC (EP/K017829/1). Publisher Copyright: {\textcopyright} 2017, Springer-Verlag Berlin Heidelberg.",

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AU - Li, Qingjiang

AU - Salaoru, Iulia

AU - Khiat, Ali

AU - Xu, Hui

AU - Prodromakis, Themistoklis

N1 - Funding Information: We acknowledge the financial support of the National Nature Science Foundation (61604177, 61471377), NUDT Science Support Program (JC-15-04-02), and EPSRC (EP/K017829/1). Publisher Copyright: © 2017, Springer-Verlag Berlin Heidelberg.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

AB - In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

UR - https://www.scopus.com/pages/publications/85018723297

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

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ER -

Correlated resistive/capacitive state variability in solid TiO₂ based memory devices

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