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The self-annealing properties at room temperature of electrochemically deposited copper have been investigated for the first time using test structures to simultaneously measure the spatial variation of sheet resistance and film stress with time. The phase changes associated with the self-annealing of copper on 200mm wafers have been observed over a period of 30 hours indirectly through these parameters, mapped across the wafer. In particular, this paper reports the influence of the electroplating current density on the resulting characteristics of the deposited copper.
|Title of host publication||Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on|
|Publication status||Published - 1 Mar 2012|
1/12/06 → 30/11/11