Depletion and enhancement mode InP high electron mobility transistors fabricated by a dry gate recess process

R. Cheung, W. Patrick, W. Baechtold

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageUndefined/Unknown
Title of host publicationProceedings of Fifth International Conference on Solid State and Integrated Circuit Technology
Pages4
Number of pages1
Publication statusPublished - 1998

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